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Charge transport mechanism and amphoteric nature of traps in amorphous silicon nitride. / Novikov, Yu N.; Gritsenko, V. A.

In: Journal of Non-Crystalline Solids, Vol. 544, 120186, 15.09.2020.

Research output: Contribution to journal › Article › peer-review

Harvard

Novikov, YN & Gritsenko, VA 2020, 'Charge transport mechanism and amphoteric nature of traps in amorphous silicon nitride', Journal of Non-Crystalline Solids, vol. 544, 120186. https://doi.org/10.1016/j.jnoncrysol.2020.120186

APA

Novikov, Y. N., & Gritsenko, V. A. (2020). Charge transport mechanism and amphoteric nature of traps in amorphous silicon nitride. Journal of Non-Crystalline Solids, 544, [120186]. https://doi.org/10.1016/j.jnoncrysol.2020.120186

Vancouver

Novikov YN, Gritsenko VA. Charge transport mechanism and amphoteric nature of traps in amorphous silicon nitride. Journal of Non-Crystalline Solids. 2020 Sept 15;544:120186. doi: 10.1016/j.jnoncrysol.2020.120186

Author

Novikov, Yu N. ; Gritsenko, V. A. / Charge transport mechanism and amphoteric nature of traps in amorphous silicon nitride. In: Journal of Non-Crystalline Solids. 2020 ; Vol. 544.

BibTeX

@article{0fea817563ce44399145c7ad837c1c63,
title = "Charge transport mechanism and amphoteric nature of traps in amorphous silicon nitride",
abstract = "The charging and discharging processes in amorphous silicon nitride (a-SiNx) by using the Metal/a-SiNx/SiO2/Si structure (MNOS) were experimentally and theoretically considered. The tunnel-thick (10 nm) SiO2 layer and metal gates with different work functions were used. This made it possible to separate the electron and hole components of the currents during the charging voltage action. The discharge times in the MNOS-structure at high temperatures (400 K) and the same “pulling” voltage coincide for electrons and holes. The charge transport is described by the multiphonon mechanism of trap ionization. In the discharging mode, the parameters of electron and hole traps in SiNx were determined and they turned out to be equal, and that indicate the amphoteric nature of traps in SiNx.",
keywords = "Amorphous silicon nitride, Charge transport, SiN, Traps, MEMORY, SiNx",
author = "Novikov, {Yu N.} and Gritsenko, {V. A.}",
year = "2020",
month = sep,
day = "15",
doi = "10.1016/j.jnoncrysol.2020.120186",
language = "English",
volume = "544",
journal = "Journal of Non-Crystalline Solids",
issn = "0022-3093",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Charge transport mechanism and amphoteric nature of traps in amorphous silicon nitride

AU - Novikov, Yu N.

AU - Gritsenko, V. A.

PY - 2020/9/15

Y1 - 2020/9/15

N2 - The charging and discharging processes in amorphous silicon nitride (a-SiNx) by using the Metal/a-SiNx/SiO2/Si structure (MNOS) were experimentally and theoretically considered. The tunnel-thick (10 nm) SiO2 layer and metal gates with different work functions were used. This made it possible to separate the electron and hole components of the currents during the charging voltage action. The discharge times in the MNOS-structure at high temperatures (400 K) and the same “pulling” voltage coincide for electrons and holes. The charge transport is described by the multiphonon mechanism of trap ionization. In the discharging mode, the parameters of electron and hole traps in SiNx were determined and they turned out to be equal, and that indicate the amphoteric nature of traps in SiNx.

AB - The charging and discharging processes in amorphous silicon nitride (a-SiNx) by using the Metal/a-SiNx/SiO2/Si structure (MNOS) were experimentally and theoretically considered. The tunnel-thick (10 nm) SiO2 layer and metal gates with different work functions were used. This made it possible to separate the electron and hole components of the currents during the charging voltage action. The discharge times in the MNOS-structure at high temperatures (400 K) and the same “pulling” voltage coincide for electrons and holes. The charge transport is described by the multiphonon mechanism of trap ionization. In the discharging mode, the parameters of electron and hole traps in SiNx were determined and they turned out to be equal, and that indicate the amphoteric nature of traps in SiNx.

KW - Amorphous silicon nitride

KW - Charge transport

KW - SiN

KW - Traps

KW - MEMORY

KW - SiNx

UR - http://www.scopus.com/inward/record.url?scp=85086414098&partnerID=8YFLogxK

U2 - 10.1016/j.jnoncrysol.2020.120186

DO - 10.1016/j.jnoncrysol.2020.120186

M3 - Article

AN - SCOPUS:85086414098

VL - 544

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

SN - 0022-3093

M1 - 120186

ER -

ID: 24519024