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Charge transport mechanism and amphoteric nature of traps in amorphous silicon nitride

Research output: Contribution to journal › Article › peer-review

Лаборатория полупроводниковых и диэлектрических материалов ФФ

DOI

https://doi.org/10.1016/j.jnoncrysol.2020.120186
Final published version

Yu N. Novikov
V. A. Gritsenko

Original language	English
Article number	120186
Number of pages	7
Journal	Journal of Non-Crystalline Solids
Volume	544
DOIs	https://doi.org/10.1016/j.jnoncrysol.2020.120186
Publication status	Published - 15 Sept 2020

Research areas

Amorphous silicon nitride, Charge transport, SiN, Traps, MEMORY, SiNx

OECD FOS+WOS

ID: 24519024