Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Charge transport mechanism and amphoteric nature of traps in amorphous silicon nitride. / Novikov, Yu N.; Gritsenko, V. A.
в: Journal of Non-Crystalline Solids, Том 544, 120186, 15.09.2020.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Charge transport mechanism and amphoteric nature of traps in amorphous silicon nitride
AU - Novikov, Yu N.
AU - Gritsenko, V. A.
PY - 2020/9/15
Y1 - 2020/9/15
N2 - The charging and discharging processes in amorphous silicon nitride (a-SiNx) by using the Metal/a-SiNx/SiO2/Si structure (MNOS) were experimentally and theoretically considered. The tunnel-thick (10 nm) SiO2 layer and metal gates with different work functions were used. This made it possible to separate the electron and hole components of the currents during the charging voltage action. The discharge times in the MNOS-structure at high temperatures (400 K) and the same “pulling” voltage coincide for electrons and holes. The charge transport is described by the multiphonon mechanism of trap ionization. In the discharging mode, the parameters of electron and hole traps in SiNx were determined and they turned out to be equal, and that indicate the amphoteric nature of traps in SiNx.
AB - The charging and discharging processes in amorphous silicon nitride (a-SiNx) by using the Metal/a-SiNx/SiO2/Si structure (MNOS) were experimentally and theoretically considered. The tunnel-thick (10 nm) SiO2 layer and metal gates with different work functions were used. This made it possible to separate the electron and hole components of the currents during the charging voltage action. The discharge times in the MNOS-structure at high temperatures (400 K) and the same “pulling” voltage coincide for electrons and holes. The charge transport is described by the multiphonon mechanism of trap ionization. In the discharging mode, the parameters of electron and hole traps in SiNx were determined and they turned out to be equal, and that indicate the amphoteric nature of traps in SiNx.
KW - Amorphous silicon nitride
KW - Charge transport
KW - SiN
KW - Traps
KW - MEMORY
KW - SiNx
UR - http://www.scopus.com/inward/record.url?scp=85086414098&partnerID=8YFLogxK
U2 - 10.1016/j.jnoncrysol.2020.120186
DO - 10.1016/j.jnoncrysol.2020.120186
M3 - Article
AN - SCOPUS:85086414098
VL - 544
JO - Journal of Non-Crystalline Solids
JF - Journal of Non-Crystalline Solids
SN - 0022-3093
M1 - 120186
ER -
ID: 24519024