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AlSb/InAs Heterostructures for Microwave Transistors. / Sukhanov, M. A.; Bakarov, A. K.; Zhuravlev, K. S.

In: Technical Physics Letters, Vol. 47, No. 2, 02.2021, p. 139-142.

Research output: Contribution to journal › Article › peer-review

Harvard

Sukhanov, MA, Bakarov, AK & Zhuravlev, KS 2021, 'AlSb/InAs Heterostructures for Microwave Transistors', Technical Physics Letters, vol. 47, no. 2, pp. 139-142. https://doi.org/10.1134/S1063785021020127

APA

Sukhanov, M. A., Bakarov, A. K., & Zhuravlev, K. S. (2021). AlSb/InAs Heterostructures for Microwave Transistors. Technical Physics Letters, 47(2), 139-142. https://doi.org/10.1134/S1063785021020127

Vancouver

Sukhanov MA, Bakarov AK, Zhuravlev KS. AlSb/InAs Heterostructures for Microwave Transistors. Technical Physics Letters. 2021 Feb;47(2):139-142. doi: 10.1134/S1063785021020127

Author

Sukhanov, M. A. ; Bakarov, A. K. ; Zhuravlev, K. S. / AlSb/InAs Heterostructures for Microwave Transistors. In: Technical Physics Letters. 2021 ; Vol. 47, No. 2. pp. 139-142.

BibTeX

@article{09183c296dd945da94916c98d0f6c68b,
title = "AlSb/InAs Heterostructures for Microwave Transistors",
abstract = "Features of the molecular beam epitaxy growth of the AlSb/InAs heterostructures with a high-mobility two-dimensional electron gas for microwave transistors with ultralow power consumption are described. The main stages of fabrication of the transistors based on the AlSb/InAs heterostructures are outlined. The drain and drain–gate characteristics of the transistors are reported and discussed.",
keywords = "AlSb/InAs heterostructures, high electron mobility transistor, molecular beam epitaxy",
author = "Sukhanov, {M. A.} and Bakarov, {A. K.} and Zhuravlev, {K. S.}",
note = "Funding Information: This study was supported by the Ministry of Science and Higher Education of the Russian Federation, project no. 075-15-2020-797 (13.1902.21.0024). Publisher Copyright: {\textcopyright} 2021, Pleiades Publishing, Ltd. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.",
year = "2021",
month = feb,
doi = "10.1134/S1063785021020127",
language = "English",
volume = "47",
pages = "139--142",
journal = "Technical Physics Letters",
issn = "1063-7850",
publisher = "PLEIADES PUBLISHING INC",
number = "2",

}

RIS

TY - JOUR

T1 - AlSb/InAs Heterostructures for Microwave Transistors

AU - Sukhanov, M. A.

AU - Bakarov, A. K.

AU - Zhuravlev, K. S.

N1 - Funding Information: This study was supported by the Ministry of Science and Higher Education of the Russian Federation, project no. 075-15-2020-797 (13.1902.21.0024). Publisher Copyright: © 2021, Pleiades Publishing, Ltd. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.

PY - 2021/2

Y1 - 2021/2

N2 - Features of the molecular beam epitaxy growth of the AlSb/InAs heterostructures with a high-mobility two-dimensional electron gas for microwave transistors with ultralow power consumption are described. The main stages of fabrication of the transistors based on the AlSb/InAs heterostructures are outlined. The drain and drain–gate characteristics of the transistors are reported and discussed.

AB - Features of the molecular beam epitaxy growth of the AlSb/InAs heterostructures with a high-mobility two-dimensional electron gas for microwave transistors with ultralow power consumption are described. The main stages of fabrication of the transistors based on the AlSb/InAs heterostructures are outlined. The drain and drain–gate characteristics of the transistors are reported and discussed.

KW - AlSb/InAs heterostructures

KW - high electron mobility transistor

KW - molecular beam epitaxy

UR - http://www.scopus.com/inward/record.url?scp=85103182264&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/35f3a5e0-cccb-3a0c-9643-248a11543446/

U2 - 10.1134/S1063785021020127

DO - 10.1134/S1063785021020127

M3 - Article

AN - SCOPUS:85103182264

VL - 47

SP - 139

EP - 142

JO - Technical Physics Letters

JF - Technical Physics Letters

SN - 1063-7850

IS - 2

ER -

ID: 28258159