TY - JOUR

T1 - AlSb/InAs Heterostructures for Microwave Transistors

AU - Sukhanov, M. A.

AU - Bakarov, A. K.

AU - Zhuravlev, K. S.

N1 - Funding Information: This study was supported by the Ministry of Science and Higher Education of the Russian Federation, project no. 075-15-2020-797 (13.1902.21.0024). Publisher Copyright: © 2021, Pleiades Publishing, Ltd. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.

PY - 2021/2

Y1 - 2021/2

N2 - Features of the molecular beam epitaxy growth of the AlSb/InAs heterostructures with a high-mobility two-dimensional electron gas for microwave transistors with ultralow power consumption are described. The main stages of fabrication of the transistors based on the AlSb/InAs heterostructures are outlined. The drain and drain–gate characteristics of the transistors are reported and discussed.

AB - Features of the molecular beam epitaxy growth of the AlSb/InAs heterostructures with a high-mobility two-dimensional electron gas for microwave transistors with ultralow power consumption are described. The main stages of fabrication of the transistors based on the AlSb/InAs heterostructures are outlined. The drain and drain–gate characteristics of the transistors are reported and discussed.

KW - AlSb/InAs heterostructures

KW - high electron mobility transistor

KW - molecular beam epitaxy

UR - http://www.scopus.com/inward/record.url?scp=85103182264&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/35f3a5e0-cccb-3a0c-9643-248a11543446/

U2 - 10.1134/S1063785021020127

DO - 10.1134/S1063785021020127

M3 - Article

AN - SCOPUS:85103182264

VL - 47

SP - 139

EP - 142

JO - Technical Physics Letters

JF - Technical Physics Letters

SN - 1063-7850

IS - 2

ER -