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All Nonmetal Resistive Random Access Memory. / Yen, Te Jui; Gismatulin, Andrei; Volodin, Vladimir et al.

In: Scientific Reports, Vol. 9, No. 1, 6144, 16.04.2019, p. 6144.

Research output: Contribution to journal › Article › peer-review

Harvard

Yen, TJ, Gismatulin, A, Volodin, V, Gritsenko, V & Chin, A 2019, 'All Nonmetal Resistive Random Access Memory', Scientific Reports, vol. 9, no. 1, 6144, pp. 6144. https://doi.org/10.1038/s41598-019-42706-9

APA

Yen, T. J., Gismatulin, A., Volodin, V., Gritsenko, V., & Chin, A. (2019). All Nonmetal Resistive Random Access Memory. Scientific Reports, 9(1), 6144. [6144]. https://doi.org/10.1038/s41598-019-42706-9

Vancouver

Yen TJ, Gismatulin A, Volodin V, Gritsenko V, Chin A. All Nonmetal Resistive Random Access Memory. Scientific Reports. 2019 Apr 16;9(1):6144. 6144. doi: 10.1038/s41598-019-42706-9

Author

Yen, Te Jui ; Gismatulin, Andrei ; Volodin, Vladimir et al. / All Nonmetal Resistive Random Access Memory. In: Scientific Reports. 2019 ; Vol. 9, No. 1. pp. 6144.

BibTeX

@article{93989b44cf2a4ea3820352ee071f352c,
title = "All Nonmetal Resistive Random Access Memory",
abstract = " Traditional Resistive Random Access Memory (RRAM) is a metal-insulator-metal (MIM) structure, in which metal oxide is usually used as an insulator. The charge transport mechanism of traditional RRAM is attributed to a metallic filament inside the RRAM. In this paper, we demonstrated a novel RRAM device with no metal inside. The N + -Si/SiO x /P + -Si combination forms a N + IP + diode structure that is different from traditional MIM RRAM. A large high-resistance/low-resistance window of 1.9 × 10 4 was measured at room temperature. A favorable retention memory window of 1.2 × 10 3 was attained for 10 4 s at 85 °C. The charge transport mechanism of virgin, high- and low-resistance states can be well modeled by the single Shklovskii-Efros percolation mechanism rather than the charge transport in metallic filament. X-ray photoelectron spectroscopy demonstrated that the value of x in SiO x was 0.62, which provided sufficient oxygen vacancies for set/reset RRAM functions. ",
keywords = "RRAM",
author = "Yen, {Te Jui} and Andrei Gismatulin and Vladimir Volodin and Vladimir Gritsenko and Albert Chin",
year = "2019",
month = apr,
day = "16",
doi = "10.1038/s41598-019-42706-9",
language = "English",
volume = "9",
pages = "6144",
journal = "Scientific Reports",
issn = "2045-2322",
publisher = "Nature Publishing Group",
number = "1",

}

RIS

TY - JOUR

T1 - All Nonmetal Resistive Random Access Memory

AU - Yen, Te Jui

AU - Gismatulin, Andrei

AU - Volodin, Vladimir

AU - Gritsenko, Vladimir

AU - Chin, Albert

PY - 2019/4/16

Y1 - 2019/4/16

N2 - Traditional Resistive Random Access Memory (RRAM) is a metal-insulator-metal (MIM) structure, in which metal oxide is usually used as an insulator. The charge transport mechanism of traditional RRAM is attributed to a metallic filament inside the RRAM. In this paper, we demonstrated a novel RRAM device with no metal inside. The N + -Si/SiO x /P + -Si combination forms a N + IP + diode structure that is different from traditional MIM RRAM. A large high-resistance/low-resistance window of 1.9 × 10 4 was measured at room temperature. A favorable retention memory window of 1.2 × 10 3 was attained for 10 4 s at 85 °C. The charge transport mechanism of virgin, high- and low-resistance states can be well modeled by the single Shklovskii-Efros percolation mechanism rather than the charge transport in metallic filament. X-ray photoelectron spectroscopy demonstrated that the value of x in SiO x was 0.62, which provided sufficient oxygen vacancies for set/reset RRAM functions.

AB - Traditional Resistive Random Access Memory (RRAM) is a metal-insulator-metal (MIM) structure, in which metal oxide is usually used as an insulator. The charge transport mechanism of traditional RRAM is attributed to a metallic filament inside the RRAM. In this paper, we demonstrated a novel RRAM device with no metal inside. The N + -Si/SiO x /P + -Si combination forms a N + IP + diode structure that is different from traditional MIM RRAM. A large high-resistance/low-resistance window of 1.9 × 10 4 was measured at room temperature. A favorable retention memory window of 1.2 × 10 3 was attained for 10 4 s at 85 °C. The charge transport mechanism of virgin, high- and low-resistance states can be well modeled by the single Shklovskii-Efros percolation mechanism rather than the charge transport in metallic filament. X-ray photoelectron spectroscopy demonstrated that the value of x in SiO x was 0.62, which provided sufficient oxygen vacancies for set/reset RRAM functions.

KW - RRAM

UR - http://www.scopus.com/inward/record.url?scp=85064539728&partnerID=8YFLogxK

U2 - 10.1038/s41598-019-42706-9

DO - 10.1038/s41598-019-42706-9

M3 - Article

C2 - 30992533

AN - SCOPUS:85064539728

VL - 9

SP - 6144

JO - Scientific Reports

JF - Scientific Reports

SN - 2045-2322

IS - 1

M1 - 6144

ER -

ID: 19629428