Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
All Nonmetal Resistive Random Access Memory. / Yen, Te Jui; Gismatulin, Andrei; Volodin, Vladimir и др.
в: Scientific Reports, Том 9, № 1, 6144, 16.04.2019, стр. 6144.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
}
TY - JOUR
T1 - All Nonmetal Resistive Random Access Memory
AU - Yen, Te Jui
AU - Gismatulin, Andrei
AU - Volodin, Vladimir
AU - Gritsenko, Vladimir
AU - Chin, Albert
PY - 2019/4/16
Y1 - 2019/4/16
N2 - Traditional Resistive Random Access Memory (RRAM) is a metal-insulator-metal (MIM) structure, in which metal oxide is usually used as an insulator. The charge transport mechanism of traditional RRAM is attributed to a metallic filament inside the RRAM. In this paper, we demonstrated a novel RRAM device with no metal inside. The N + -Si/SiO x /P + -Si combination forms a N + IP + diode structure that is different from traditional MIM RRAM. A large high-resistance/low-resistance window of 1.9 × 10 4 was measured at room temperature. A favorable retention memory window of 1.2 × 10 3 was attained for 10 4 s at 85 °C. The charge transport mechanism of virgin, high- and low-resistance states can be well modeled by the single Shklovskii-Efros percolation mechanism rather than the charge transport in metallic filament. X-ray photoelectron spectroscopy demonstrated that the value of x in SiO x was 0.62, which provided sufficient oxygen vacancies for set/reset RRAM functions.
AB - Traditional Resistive Random Access Memory (RRAM) is a metal-insulator-metal (MIM) structure, in which metal oxide is usually used as an insulator. The charge transport mechanism of traditional RRAM is attributed to a metallic filament inside the RRAM. In this paper, we demonstrated a novel RRAM device with no metal inside. The N + -Si/SiO x /P + -Si combination forms a N + IP + diode structure that is different from traditional MIM RRAM. A large high-resistance/low-resistance window of 1.9 × 10 4 was measured at room temperature. A favorable retention memory window of 1.2 × 10 3 was attained for 10 4 s at 85 °C. The charge transport mechanism of virgin, high- and low-resistance states can be well modeled by the single Shklovskii-Efros percolation mechanism rather than the charge transport in metallic filament. X-ray photoelectron spectroscopy demonstrated that the value of x in SiO x was 0.62, which provided sufficient oxygen vacancies for set/reset RRAM functions.
KW - RRAM
UR - http://www.scopus.com/inward/record.url?scp=85064539728&partnerID=8YFLogxK
U2 - 10.1038/s41598-019-42706-9
DO - 10.1038/s41598-019-42706-9
M3 - Article
C2 - 30992533
AN - SCOPUS:85064539728
VL - 9
SP - 6144
JO - Scientific Reports
JF - Scientific Reports
SN - 2045-2322
IS - 1
M1 - 6144
ER -
ID: 19629428