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AlInSb/InSb Heterostructures for IR Photodetectors Grown by Molecular-Beam Epitaxy. / Sukhanov, M. A.; Bakarov, A. K.; Protasov, D. Yu et al.

In: Technical Physics Letters, Vol. 46, No. 2, 01.02.2020, p. 154-157.

Research output: Contribution to journal › Article › peer-review

Harvard

Sukhanov, MA, Bakarov, AK, Protasov, DY & Zhuravlev, KS 2020, 'AlInSb/InSb Heterostructures for IR Photodetectors Grown by Molecular-Beam Epitaxy', Technical Physics Letters, vol. 46, no. 2, pp. 154-157. https://doi.org/10.1134/S1063785020020285

APA

Sukhanov, M. A., Bakarov, A. K., Protasov, D. Y., & Zhuravlev, K. S. (2020). AlInSb/InSb Heterostructures for IR Photodetectors Grown by Molecular-Beam Epitaxy. Technical Physics Letters, 46(2), 154-157. https://doi.org/10.1134/S1063785020020285

Vancouver

Sukhanov MA, Bakarov AK, Protasov DY, Zhuravlev KS. AlInSb/InSb Heterostructures for IR Photodetectors Grown by Molecular-Beam Epitaxy. Technical Physics Letters. 2020 Feb 1;46(2):154-157. doi: 10.1134/S1063785020020285

Author

Sukhanov, M. A. ; Bakarov, A. K. ; Protasov, D. Yu et al. / AlInSb/InSb Heterostructures for IR Photodetectors Grown by Molecular-Beam Epitaxy. In: Technical Physics Letters. 2020 ; Vol. 46, No. 2. pp. 154-157.

BibTeX

@article{b3dd002909fd445eb7955c02e6445541,
title = "AlInSb/InSb Heterostructures for IR Photodetectors Grown by Molecular-Beam Epitaxy",
abstract = "A photodetector heterostructure based on AlInSb/InSb was grown by molecular-beam epitaxy. Mesostructures of different diameters were fabricated. The temperature dependence of the dark current was measured. It was demonstrated that the built-in barrier blocks the flow of majority charge carriers, thus reducing the dark-current density (relative to that for a pin structure based on InSb). The measured dependence of the dark current on the mesostructure size revealed that the bulk current component prevails over the surface one.",
keywords = "dark current, InSb, IR photodetector, molecular-beam epitaxy, nBn detector",
author = "Sukhanov, {M. A.} and Bakarov, {A. K.} and Protasov, {D. Yu} and Zhuravlev, {K. S.}",
year = "2020",
month = feb,
day = "1",
doi = "10.1134/S1063785020020285",
language = "English",
volume = "46",
pages = "154--157",
journal = "Technical Physics Letters",
issn = "1063-7850",
publisher = "PLEIADES PUBLISHING INC",
number = "2",

}

RIS

TY - JOUR

T1 - AlInSb/InSb Heterostructures for IR Photodetectors Grown by Molecular-Beam Epitaxy

AU - Sukhanov, M. A.

AU - Bakarov, A. K.

AU - Protasov, D. Yu

AU - Zhuravlev, K. S.

PY - 2020/2/1

Y1 - 2020/2/1

N2 - A photodetector heterostructure based on AlInSb/InSb was grown by molecular-beam epitaxy. Mesostructures of different diameters were fabricated. The temperature dependence of the dark current was measured. It was demonstrated that the built-in barrier blocks the flow of majority charge carriers, thus reducing the dark-current density (relative to that for a pin structure based on InSb). The measured dependence of the dark current on the mesostructure size revealed that the bulk current component prevails over the surface one.

AB - A photodetector heterostructure based on AlInSb/InSb was grown by molecular-beam epitaxy. Mesostructures of different diameters were fabricated. The temperature dependence of the dark current was measured. It was demonstrated that the built-in barrier blocks the flow of majority charge carriers, thus reducing the dark-current density (relative to that for a pin structure based on InSb). The measured dependence of the dark current on the mesostructure size revealed that the bulk current component prevails over the surface one.

KW - dark current

KW - InSb

KW - IR photodetector

KW - molecular-beam epitaxy

KW - nBn detector

UR - http://www.scopus.com/inward/record.url?scp=85083961970&partnerID=8YFLogxK

U2 - 10.1134/S1063785020020285

DO - 10.1134/S1063785020020285

M3 - Article

AN - SCOPUS:85083961970

VL - 46

SP - 154

EP - 157

JO - Technical Physics Letters

JF - Technical Physics Letters

SN - 1063-7850

IS - 2

ER -

ID: 24162268