TY - JOUR

T1 - AlInSb/InSb Heterostructures for IR Photodetectors Grown by Molecular-Beam Epitaxy

AU - Sukhanov, M. A.

AU - Bakarov, A. K.

AU - Protasov, D. Yu

AU - Zhuravlev, K. S.

PY - 2020/2/1

Y1 - 2020/2/1

N2 - A photodetector heterostructure based on AlInSb/InSb was grown by molecular-beam epitaxy. Mesostructures of different diameters were fabricated. The temperature dependence of the dark current was measured. It was demonstrated that the built-in barrier blocks the flow of majority charge carriers, thus reducing the dark-current density (relative to that for a pin structure based on InSb). The measured dependence of the dark current on the mesostructure size revealed that the bulk current component prevails over the surface one.

AB - A photodetector heterostructure based on AlInSb/InSb was grown by molecular-beam epitaxy. Mesostructures of different diameters were fabricated. The temperature dependence of the dark current was measured. It was demonstrated that the built-in barrier blocks the flow of majority charge carriers, thus reducing the dark-current density (relative to that for a pin structure based on InSb). The measured dependence of the dark current on the mesostructure size revealed that the bulk current component prevails over the surface one.

KW - dark current

KW - InSb

KW - IR photodetector

KW - molecular-beam epitaxy

KW - nBn detector

UR - http://www.scopus.com/inward/record.url?scp=85083961970&partnerID=8YFLogxK

U2 - 10.1134/S1063785020020285

DO - 10.1134/S1063785020020285

M3 - Article

AN - SCOPUS:85083961970

VL - 46

SP - 154

EP - 157

JO - Technical Physics Letters

JF - Technical Physics Letters

SN - 1063-7850

IS - 2

ER -