AlInSb/InSb Heterostructures for IR Photodetectors Grown by Molecular-Beam Epitaxy › Research Explorer

DOI

https://doi.org/10.1134/S1063785020020285
Final published version

M. A. Sukhanov
A. K. Bakarov
D. Yu Protasov
K. S. Zhuravlev

Original language	English
Pages (from-to)	154-157
Number of pages	4
Journal	Technical Physics Letters
Volume	46
Issue number	2
DOIs	https://doi.org/10.1134/S1063785020020285
Publication status	Published - 1 Feb 2020

OECD FOS+WOS

Research areas

dark current, InSb, IR photodetector, molecular-beam epitaxy, nBn detector

ID: 24162268