Research output: Contribution to journal › Article › peer-review
| Translated title of the contribution | COMPLEXES OF INTRINSIC POINT DEFECTS IN SILICON FORMED AS A RESULT OF HIGH-ENERGY XENON ION IMPLANTATION AND POST-IMPLANTATION ANNEALING |
|---|---|
| Original language | Russian |
| Pages (from-to) | 298-301 |
| Journal | Физика и техника полупроводников |
| Volume | 59 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2025 |
ID: 75451127