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  1. Thermal roughening of GaAs surface by unwinding dislocation-induced spiral atomic steps during sublimation

    Kazantsev, D. M., Akhundov, I. O., Rudaya, N. S., Kozhukhov, A. S., Alperovich, V. L. & Latyshev, A. V., 1 Nov 2020, In: Applied Surface Science. 529, 6 p., 147090.

    Research output: Contribution to journal › Article › peer-review

  2. Thermal Smoothing and Roughening of GaAs Surfaces: Experiment and Monte Carlo Simulation

    Kazantsev, D. M., Akhundov, I. O., Alperovich, V. L., Shwartz, N. L., Kozhukhov, A. S. & Latyshev, A. V., 1 May 2018, In: Semiconductors. 52, 5, p. 618-621 4 p.

    Research output: Contribution to journal › Article › peer-review

  3. The role of a plasmonic substrate on the enhancement and spatial resolution of tip-enhanced Raman scattering

    Rahaman, M., Milekhin, A. G., Mukherjee, A., Rodyakina, E. E., Latyshev, A. V., Dzhagan, V. M. & Zahn, D. R. T., 1 May 2019, In: Faraday Discussions. 214, p. 309-323 15 p.

    Research output: Contribution to journal › Article › peer-review

  4. Two-dimensional photonic crystals fabrication and close-packing by electron-beam lithography

    Utkin, D. E., Nasimov, D. A. & Latyshev, A. V., 2012, 2012 13th Annual International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM'2012 - Proceedings. p. 47-50 4 p. 6310185. (International Workshop and Tutorials on Electron Devices and Materials, EDM - Proceedings).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

  5. Universality of the (113) Habit Plane in Si for Mixed Aggregation of Vacancies and Self-Interstitial Atoms Provided by Topological Bond Defect Formation

    Fedina, L. I., Gutakovskii, A. K., Latyshev, A. V. & Aseev, A. L., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Publishing Company, Inc., p. 383-407 25 p. (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications).

    Research output: Chapter in Book/Report/Conference proceeding › Chapter › Research › peer-review

  6. Van der Waals Heteroepitaxial Growth of Layered SnSe2 on Surfaces Si(111) and Bi2Se3 (0001)

    Ponomarev, S. A., Zakhozhev, K. E., Rogilo, D. I., Kurus’, N. N., Sheglov, D. V., Milekhin, A. G. & Latyshev, A. V., 2022, In: Optoelectronics, Instrumentation and Data Processing. 58, 6, p. 564-570 7 p.

    Research output: Contribution to journal › Article › peer-review

  7. Wavelength dependent gap-mode TERS by CdSe nanocrystals on a single Au nanodisk

    Milekhin, I. A., Rahaman, M., Tsarev, A. V., Anikin, K. V., Rodyakina, E. E., Duda, T. A., Saidzhonov, B. M., Vasiliev, R. B., Milekhin, A. G., Latyshev, A. V. & Zahn, D. R. T., 30 Mar 2025, In: Applied Surface Science. 686, 162144.

    Research output: Contribution to journal › Article › peer-review

  8. Кафедра физики полупроводников физического факультета Новосибирского государственного университета

    Альперович, В. Л., Квон, З. Д. & Латышев, А. В., 2022, In: Сибирский физический журнал. 17, 1, p. 104-117 14 p., 9.

    Research output: Contribution to journal › Article › peer-review

  9. Локальное гиперспектральное картированиенанокластера AlN с нанометровым пространственным разрешением

    Milekhin, I., Anikin, K. V., Курусь, Н. Н., Mansurov, V. G., Malin, T. V., Журавлев, К. С., Милёхин, А. Г., Латышев, А. В. & ZAHN, D. R. Т., 2023, КОМБИНАЦИОННОЕ РАССЕЯНИЕ - 95 ЛЕТ ИССЛЕДОВАНИЙ: Тезисы докладов Российской конференции и школы молодых ученых по актуальным проблемам спектроскопии комбинационного рассеяния света. Москва: Издательство "Перо"

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

  10. Научное наследие С.В. Богданова

    Кидяров, Б. И., Колосовский, Е. А., Царев, А. В., Неизвестный, И. Г., Асеев, А. Л., Латышев, А. В., Чаплик, А. В. & Двуреченский, А. В., Nov 2021, In: Автометрия. 57, 5, p. 106-110 5 p., 13.

    Research output: Contribution to journal › Article › peer-review

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