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  1. 2024

  2. Parametrization of the charge-carrier mobility in organic disordered semiconductors

    Baranovskii, S. D., Nenashev, A. V., Hertel, D., Meerholz, K. & Gebhard, F., Jul 2024, In: Physical Review Applied. 22, 1, 12 p., 014019.

    Research output: Contribution to journal › Article › peer-review

  3. 2023

  4. Quantum states in disordered media. II. Spatial charge carrier distribution

    Nenashev, A. V., Baranovskii, S. D., Meerholz, K. & Gebhard, F., 1 Feb 2023, In: Physical Review B. 107, 6, 23 p., 064207.

    Research output: Contribution to journal › Article › peer-review

  5. Quantum states in disordered media. I. Low-pass filter approach

    Gebhard, F., Nenashev, A. V., Meerholz, K. & Baranovskii, S. D., 2023, In: Physical Review B. 107, 6, 17 p., 064206.

    Research output: Contribution to journal › Article › peer-review

  6. 2022

  7. Groups of Ge nanoislands grown outside pits on pit-patterned Si substrates

    Rudin, S. A., Zinovyev, V. A., Smagina, Z. V., Novikov, P. L., Nenashev, A. V. & Pavsky, K. V., 1 Sept 2022, In: Journal of Crystal Growth. 593, 126763.

    Research output: Contribution to journal › Article › peer-review

  8. Percolation Description of Charge Transport in Amorphous Oxide Semiconductors: Band Conduction Dominated by Disorder

    Nenashev, A. V., Gebhard, F., Meerholz, K. & Baranovskii, S. D., Aug 2022, Amorphous Oxide Semiconductors: A singular resource on amorphous oxide semiconductors edited by a world-recognized pioneer in the field. Hosono, H. & Kumomi, H. (eds.). Wiley-VCH Verlag, p. 125-144 20 p. (Amorphous Oxide Semiconductors).

    Research output: Chapter in Book/Report/Conference proceeding › Chapter › Research › peer-review

  9. Comment on “Interplay of Structural and Optoelectronic Properties in Formamidinium Mixed Tin-Lead Triiodide Perovskites”

    Baranovskii, S. D., Höhbusch, P., Nenashev, A. V., Dvurechenskii, A. V., Gerhard, M., Hertel, D., Meerholz, K., Koch, M. & Gebhard, F., 25 Jul 2022, In: Advanced Functional Materials. 32, 30, 2201309.

    Research output: Contribution to journal › Article › peer-review

  10. Generating Function Method for Calculating the Potentials of Inhomogeneous Polyhedra

    Nenashev, A. V., 20 Jan 2022, In: Frontiers in Physics. 9, 795693.

    Research output: Contribution to journal › Article › peer-review

  11. Weak antilocalization to weak localization transition in Bi2Se3 films on graphene

    Stepina, N. P., Golyashov, V. A., Nenashev, A. V., Tereshchenko, O. E., Kokh, K. A., Kirienko, V. V., Koptev, E. S., Goldyreva, E. S., Rybin, M. G., Obraztsova, E. D. & Antonova, I. V., Jan 2022, In: Physica E: Low-Dimensional Systems and Nanostructures. 135, 114969.

    Research output: Contribution to journal › Article › peer-review

  12. 2021

  13. Tunneling current modulation in atomically precise graphene nanoribbon heterojunctions

    Senkovskiy, B. V., Nenashev, A. V., Alavi, S. K., Falke, Y., Hell, M., Bampoulis, P., Rybkovskiy, D. V., Usachov, D. Y., Fedorov, A. V., Chernov, A. I., Gebhard, F., Meerholz, K., Hertel, D., Arita, M., Okuda, T., Miyamoto, K., Shimada, K., Fischer, F. R., Michely, T., Baranovskii, S. D., & 3 othersLindfors, K., Szkopek, T. & Grüneis, A., 1 Dec 2021, In: Nature Communications. 12, 1, p. 2542 2542.

    Research output: Contribution to journal › Article › peer-review

  14. One-stage formation of two-dimensional photonic crystal and spatially ordered arrays of self-assembled ge(Si) nanoislandson pit-patterned silicon-on-insulator substrate

    Novikov, A. V., Smagina, Z. V., Stepikhova, M. V., Zinovyev, V. A., Rudin, S. A., Dyakov, S. A., Rodyakina, E. E., Nenashev, A. V., Sergeev, S. M., Peretokin, A. V. & Dvurechenskii, A. V., Apr 2021, In: Nanomaterials. 11, 4, 909.

    Research output: Contribution to journal › Article › peer-review

  15. Formation of InAs/GaP Quantum-Well Heterostructures on Silicon Substrates by Molecular-Beam Epitaxy

    Abramkin, D. S., Petrushkov, M. O., Emelyanov, E. A., Nenashev, A. V., Yesin, M. Y., Vasev, A. V., Putyato, M. A., Bogomolov, D. B., Gutakovskiy, A. K. & Preobrazhenskiy, V. V., Feb 2021, In: Semiconductors. 55, 2, p. 194-201 8 p.

    Research output: Contribution to journal › Article › peer-review

  16. Electron Spin Resonance in Heterostructures with Ring Molecules of GeSi Quantum Dots

    Zinovieva, A. F., Zinovyev, V. A., Nenashev, A. V., Shklyaev, A. A., Kulik, L. V. & Dvurechenskii, A. V., Jan 2021, In: JETP Letters. 113, 1, p. 52-56 5 p.

    Research output: Contribution to journal › Article › peer-review

  17. 2020

  18. Self-Organization of Ge(Si) Nanoisland Groups on Pit-Patterned Si(100) Substrates

    Smagina, Z. V., Zinoviev, V. A., Rudin, S. A., Rodyakina, E. E., Novikov, P. L., Nenashev, A. V. & Dvurechenskii, A. V., Dec 2020, In: Semiconductors. 54, 14, p. 1866-1868 3 p.

    Research output: Contribution to journal › Article › peer-review

  19. Comment on "charge transport in disordered semiconducting polymers driven by nuclear tunneling"

    Nenashev, A. V., Gebhard, F. & Baranovskii, S. D., 1 Aug 2020, In: Physical Review B. 102, 6, 1 p., 066201.

    Research output: Contribution to journal › Article › peer-review

  20. Luminescence of Spatially Ordered Self-Assembled Solitary Ge(Si) Nanoislands and their Groups Incorporated into Photonic Crystals

    Smagina, Z. V., Novikov, A. V., Stepikhova, M. V., Zinovyev, V. A., Rodyakina, E. E., Nenashev, A. V., Sergeev, S. M., Peretokin, A. V., Kuchinskaya, P. A., Shaleev, M. V., Gusev, S. A. & Dvurechenskii, A. V., 1 Aug 2020, In: Semiconductors. 54, 8, p. 853-859 7 p.

    Research output: Contribution to journal › Article › peer-review

  21. Magnetic field effect on the slow relaxation of photoconductance in tunnel coupled quantum dot arrays

    Stepina, N. P., Shumilin, A. V., Zinovieva, A. F., Nenashev, A. V., Gornov, A. Y. & Dvurechenskii, A. V., Jul 2020, In: Physica E: Low-Dimensional Systems and Nanostructures. 121, 5 p., 114126.

    Research output: Contribution to journal › Article › peer-review

  22. Self-assembled epitaxial metal-semiconductor nanostructures with enhanced GeSi quantum dot luminescence

    Zinovyev, V. A., Zinovieva, A. F., Nenashev, A. V., Dvurechenskii, A. V., Katsuba, A. V., Borodavchenko, O. M., Zhivulko, V. D. & Mudryi, A. V., 28 Jun 2020, In: Journal of Applied Physics. 127, 24, 7 p., 243108.

    Research output: Contribution to journal › Article › peer-review

  23. Photoluminescence of compact GeSi quantum dot groups with increased probability of finding an electron in Ge

    Zinovieva, A. F., Zinovyev, V. A., Nenashev, A. V., Teys, S. A., Dvurechenskii, A. V., Borodavchenko, O. M., Zhivulko, V. D. & Mudryi, A. V., 9 Jun 2020, In: Scientific Reports. 10, 1, 9 p., 9308.

    Research output: Contribution to journal › Article › peer-review

  24. Variational method of energy level calculation in pyramidal quantum dots

    Nenashev, A. V. & Dvurechenskii, A. V., 21 Apr 2020, In: Journal of Applied Physics. 127, 15, 8 p., 154301.

    Research output: Contribution to journal › Article › peer-review

  25. 2019

  26. Percolation description of charge transport in amorphous oxide semiconductors

    Nenashev, A. V., Oelerich, J. O., Greiner, S. H. M., Dvurechenskii, A. V., Gebhard, F. & Baranovskii, S. D., 12 Sept 2019, In: Physical Review B. 100, 12, 8 p., 125202.

    Research output: Contribution to journal › Article › peer-review

  27. Percolation description of charge transport in the random barrier model applied to amorphous oxide semiconductors

    Baranovskii, S. D., Nenashev, A. V., Oelerich, J. O., Greiner, S. H. M., Dvurechenskii, A. V. & Gebhard, F., 1 Sept 2019, In: EPL. 127, 5, 5 p., 57004.

    Research output: Contribution to journal › Article › peer-review

  28. Electron spatial localization tuned by strain in Ge/Si quantum dot heterostructures

    Zinovieva, A. F., Zinovyev, V. A., Nenashev, A. V., Kulik, L. V. & Dvurechenskii, A. V., 22 Mar 2019, In: Physical Review B. 99, 11, 9 p., 115314.

    Research output: Contribution to journal › Article › peer-review

  29. 2018

  30. Nucleation of Three-Dimensional Ge Islands on a Patterned Si(100) Surface

    Rudin, S. A., Smagina, Z. V., Zinovyev, V. A., Novikov, P. L., Nenashev, A. V., Rodyakina, E. E. & Dvurechenskii, A. V., 1 Nov 2018, In: Semiconductors. 52, 11, p. 1457-1461 5 p.

    Research output: Contribution to journal › Article › peer-review

  31. Release of carriers from traps enhanced by hopping

    Nenashev, A. V., Valkovskii, V. V., Oelerich, J. O., Dvurechenskii, A. V., Semeniuk, O., Reznik, A., Gebhard, F. & Baranovskii, S. D., 30 Oct 2018, In: Physical Review B. 98, 15, 10 p., 155207.

    Research output: Contribution to journal › Article › peer-review

  32. Field-enhanced mobility in the multiple-trapping regime

    Nenashev, A. V., Oelerich, J. O., Jandieri, K., Valkovskii, V. V., Semeniuk, O., Dvurechenskii, A. V., Gebhard, F., Juška, G., Reznik, A. & Baranovskii, S. D., 3 Jul 2018, In: Physical Review B. 98, 3, 8 p., 035201.

    Research output: Contribution to journal › Article › peer-review

  33. Quantum Gates with Spin States in Continuous Microwave Field

    Zinovieva, A. F., Nenashev, A. V., Koshkarev, A. A., Zarodnyuk, T. S., Gornov, A. Y. & Dvurechenskii, A. V., 1 Jul 2018, In: Russian Microelectronics. 47, 4, p. 268-278 11 p.

    Research output: Contribution to journal › Article › peer-review

  34. Approximate analytical description of the elastic strain field due to an inclusion in a continuous medium with cubic anisotropy

    Nenashev, A. V., Koshkarev, A. A. & Dvurechenskii, A. V., 14 Mar 2018, In: Journal of Applied Physics. 123, 10, 11 p., 105104.

    Research output: Contribution to journal › Article › peer-review

  35. 2017

  36. Photoluminescence from Ordered Ge/Si Quantum Dot Groups Grown on the Strain-Patterned Substrates

    Dvurechenskii, A., Zinovieva, A., Zinovyev, V., Nenashev, A., Smagina, Z., Teys, S., Shklyaev, A., Erenburg, S., Trubina, S., Borodavchenko, O., Zhivulko, V. & Mudryi, A., 1 Dec 2017, In: Physica Status Solidi (C) Current Topics in Solid State Physics. 14, 12, 6 p., 1700187.

    Research output: Contribution to journal › Article › peer-review

  37. Field dependence of hopping mobility: Lattice models against spatial disorder

    Oelerich, J. O., Nenashev, A. V., Dvurechenskii, A. V., Gebhard, F. & Baranovskii, S. D., 21 Nov 2017, In: Physical Review B. 96, 19, 9 p., 195208.

    Research output: Contribution to journal › Article › peer-review

  38. Hall effect in hopping conduction in an ensemble of quantum dots

    Stepina, N. P., Nenashev, A. V. & Dvurechenskii, A. V., 1 Sept 2017, In: JETP Letters. 106, 5, p. 308-312 5 p.

    Research output: Contribution to journal › Article › peer-review

  39. Fundamental characteristic length scale for the field dependence of hopping charge transport in disordered organic semiconductors

    Nenashev, A. V., Oelerich, J. O., Dvurechenskii, A. V., Gebhard, F. & Baranovskii, S. D., 21 Jul 2017, In: Physical Review B. 96, 3, 7 p., 035204.

    Research output: Contribution to journal › Article › peer-review

  40. Analytical theory for charge carrier recombination in blend organic solar cells

    Nenashev, A. V., Wiemer, M., Dvurechenskii, A. V., Kulik, L. V., Pevtsov, A. B., Gebhard, F., Koch, M. & Baranovskii, S. D., 28 Mar 2017, In: Physical Review B. 95, 10, 12 p., 104207.

    Research output: Contribution to journal › Article › peer-review

  41. Elastic strain field due to an inclusion of a polyhedral shape with a non-uniform lattice misfit

    Nenashev, A. V. & Dvurechenskii, A. V., 28 Mar 2017, In: Journal of Applied Physics. 121, 12, 19 p., 125102.

    Research output: Contribution to journal › Article › peer-review

  42. ESR Study of Electron States in Ge/Si Heterostructures with Nanodisc Shaped Quantum Dots

    Zinovieva, A. F., Zinovyev, V. A., Nenashev, A. V., Kulik, L. V. & Dvurechenskii, A. V., 1 Feb 2017, In: Zeitschrift fur Physikalische Chemie. 231, 2, p. 405-423 19 p.

    Research output: Contribution to journal › Article › peer-review

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