Field-enhanced mobility in the multiple-trapping regime › Research Explorer

Novosibirsk State University's Research Portal

Field-enhanced mobility in the multiple-trapping regime

Research output: Contribution to journal › Article › peer-review

Semiconductor Physics Section

DOI

https://doi.org/10.1103/PhysRevB.98.035201
Final published version

A. V. Nenashev
J. O. Oelerich
K. Jandieri
V. V. Valkovskii
O. Semeniuk
A. V. Dvurechenskii
F. Gebhard
G. Juška
A. Reznik
S. D. Baranovskii

Original language	English
Article number	035201
Number of pages	8
Journal	Physical Review B
Volume	98
Issue number	3
DOIs	https://doi.org/10.1103/PhysRevB.98.035201
Publication status	Published - 3 Jul 2018

OECD FOS+WOS

Research areas

AMORPHOUS OXIDE SEMICONDUCTOR, THIN-FILM TRANSISTORS, STRONG ELECTRIC-FIELD, A-SI-H, IMPACT IONIZATION, CHARGE-CARRIERS, TEMPERATURE, TRANSPORT, SILICON, STATES

ID: 15966350