1. 2020
  2. Formation of submicron- and micron-sized SiGe and Ge particles on Si substrates using dewetting

    Shklyaev, A. A., 23 Apr 2020, In: Journal of Physics: Conference Series. 1461, 1, 3 p., 012160.

    Research output: Contribution to journalConference articlepeer-review

  3. Atomic structure of high Miller index Si(47 35 7) surface

    Zhachuk, R. A., Dolbak, A. E. & Shklyaev, A. A., Mar 2020, In: Surface Science. 693, 5 p., 121549.

    Research output: Contribution to journalArticlepeer-review

  4. Low-temperature dissipation and its persistent photoinduced change in AlGaAs/GaAs-based nanomechanical resonators

    Shevyrin, A. A., Pogosov, A. G., Bakarov, A. K. & Shklyaev, A. A., 3 Feb 2020, In: Applied Physics Letters. 116, 5, 5 p., 053104.

    Research output: Contribution to journalArticlepeer-review

  5. Effect of deposition conditions on the thermal stability of Ge layers on SiO2 and their dewetting behavior

    Dabard, C., Shklyaev, A. A., Armbrister, V. A. & Aseev, A. L., 1 Jan 2020, In: Thin Solid Films. 693, 7 p., 137681.

    Research output: Contribution to journalArticlepeer-review

  6. 2019
  7. Universal building block for (1 1 0)-family silicon and germanium surfaces

    Zhachuk, R. A. & Shklyaev, A. A., 15 Nov 2019, In: Applied Surface Science. 494, p. 46-50 5 p.

    Research output: Contribution to journalArticlepeer-review

  8. Suspended quantum point contact with triple channel selectively driven by side gates

    Pokhabov, D. A., Pogosov, A. G., Zhdanov, E. Y., Bakarov, A. K. & Shklyaev, A. A., 7 Oct 2019, In: Applied Physics Letters. 115, 15, 152101.

    Research output: Contribution to journalArticlepeer-review

  9. Nanoscale characterization of photonic metasurface made of lens-like SiGe Mie-resonators formed on Si (100) substrate

    Poborchii, V., Shklyaev, A., Bolotov, L. & Uchida, N., 28 Sept 2019, In: Journal of Applied Physics. 126, 12, 11 p., 123102.

    Research output: Contribution to journalArticlepeer-review

  10. On-chip Piezoelectric Actuation of Nanomechanical Resonators Containing a Two-dimensional Electron Gas

    Shevyrin, A. A., Bakarov, A. K., Shklyaev, A. A., Arakcheev, A. S., Kurosu, M., Yamaguchi, H. & Pogosov, A. G., 1 Feb 2019, In: JETP Letters. 109, 4, p. 261-265 5 p.

    Research output: Contribution to journalArticlepeer-review

  11. Electromigration effect on the surface morphology during the Ge deposition on Si(1 1 1) at high temperatures

    Shklyaev, A. A. & Latyshev, A. V., 28 Jan 2019, In: Applied Surface Science. 465, p. 10-14 5 p.

    Research output: Contribution to journalArticlepeer-review

  12. 2018
  13. Kelvin force and Raman microscopies of flat SiGe structures with different compositions grown on Si(111) at high temperatures

    Shklyaev, A. A., Bolotov, L., Poborchii, V., Tada, T. & Romanyuk, K. N., 15 Aug 2018, In: Materials Science in Semiconductor Processing. 83, p. 107-114 8 p.

    Research output: Contribution to journalArticlepeer-review

ID: 3455017