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  1. 2020

  2. Low-temperature dissipation and its persistent photoinduced change in AlGaAs/GaAs-based nanomechanical resonators

    Shevyrin, A. A., Pogosov, A. G., Bakarov, A. K. & Shklyaev, A. A., 3 Feb 2020, In: Applied Physics Letters. 116, 5, 5 p., 053104.

    Research output: Contribution to journal › Article › peer-review

  3. Effect of deposition conditions on the thermal stability of Ge layers on SiO2 and their dewetting behavior

    Dabard, C., Shklyaev, A. A., Armbrister, V. A. & Aseev, A. L., 1 Jan 2020, In: Thin Solid Films. 693, 7 p., 137681.

    Research output: Contribution to journal › Article › peer-review

  4. 2019

  5. Universal building block for (1 1 0)-family silicon and germanium surfaces

    Zhachuk, R. A. & Shklyaev, A. A., 15 Nov 2019, In: Applied Surface Science. 494, p. 46-50 5 p.

    Research output: Contribution to journal › Article › peer-review

  6. Suspended quantum point contact with triple channel selectively driven by side gates

    Pokhabov, D. A., Pogosov, A. G., Zhdanov, E. Y., Bakarov, A. K. & Shklyaev, A. A., 7 Oct 2019, In: Applied Physics Letters. 115, 15, 152101.

    Research output: Contribution to journal › Article › peer-review

  7. Nanoscale characterization of photonic metasurface made of lens-like SiGe Mie-resonators formed on Si (100) substrate

    Poborchii, V., Shklyaev, A., Bolotov, L. & Uchida, N., 28 Sept 2019, In: Journal of Applied Physics. 126, 12, 11 p., 123102.

    Research output: Contribution to journal › Article › peer-review

  8. On-chip Piezoelectric Actuation of Nanomechanical Resonators Containing a Two-dimensional Electron Gas

    Shevyrin, A. A., Bakarov, A. K., Shklyaev, A. A., Arakcheev, A. S., Kurosu, M., Yamaguchi, H. & Pogosov, A. G., 1 Feb 2019, In: JETP Letters. 109, 4, p. 261-265 5 p.

    Research output: Contribution to journal › Article › peer-review

  9. Electromigration effect on the surface morphology during the Ge deposition on Si(1 1 1) at high temperatures

    Shklyaev, A. A. & Latyshev, A. V., 28 Jan 2019, In: Applied Surface Science. 465, p. 10-14 5 p.

    Research output: Contribution to journal › Article › peer-review

  10. 2018

  11. Kelvin force and Raman microscopies of flat SiGe structures with different compositions grown on Si(111) at high temperatures

    Shklyaev, A. A., Bolotov, L., Poborchii, V., Tada, T. & Romanyuk, K. N., 15 Aug 2018, In: Materials Science in Semiconductor Processing. 83, p. 107-114 8 p.

    Research output: Contribution to journal › Article › peer-review

  12. Shapes of the micron-sized SiGe islands grown on Si(100) in Dewetting Conditions

    Budazhapova, A. E. & Shklyaev, A. A., 13 Aug 2018, 2018 19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2018 - Proceedings. IEEE Computer Society, Vol. 2018-July. p. 16-18 3 p. 8434951

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

  13. The observation of the Aharonov-Bohm effect in suspended semiconductor ring interferometers

    Pokhabov, D. A., Pogosov, A. G., Shevyrin, A. A., Yu Zhdanov, E., Bakarov, A. K., Shklyaev, A. A., Ishutkin, S. V., Stepanenko, M. V. & Shesterikov, E. V., 2 Mar 2018, In: Journal of Physics: Conference Series. 964, 1, 5 p., 012008.

    Research output: Contribution to journal › Conference article › peer-review

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