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  1. 2018

  2. Electrically controlled spin polarization in suspended GaAs quantum point contacts

    Pokhabov, D. A., Pogosov, A. G., Zhdanov, E. Y., Shevyrin, A. A., Bakarov, A. K. & Shklyaev, A. A., 1 Jan 2018, In: Journal of Physics: Conference Series. 1124, 6, 061001.

    Research output: Contribution to journal › Conference article › peer-review

  3. Raman and photoluminescence spectroscopy of SiGe layer evolution on Si(100) induced by dewetting

    Shklyaev, A. A., Volodin, V. A., Stoffel, M., Rinnert, H. & Vergnat, M., 7 Jan 2018, In: Journal of Applied Physics. 123, 1, 8 p., 015304.

    Research output: Contribution to journal › Article › peer-review

  4. Lateral-electric-field-induced spin polarization in a suspended GaAs quantum point contact

    Pokhabov, D. A., Pogosov, A. G., Zhdanov, E. Y., Shevyrin, A. A., Bakarov, A. K. & Shklyaev, A. A., 19 Feb 2018, In: Applied Physics Letters. 112, 8, 4 p., 082102.

    Research output: Contribution to journal › Article › peer-review

  5. The observation of the Aharonov-Bohm effect in suspended semiconductor ring interferometers

    Pokhabov, D. A., Pogosov, A. G., Shevyrin, A. A., Yu Zhdanov, E., Bakarov, A. K., Shklyaev, A. A., Ishutkin, S. V., Stepanenko, M. V. & Shesterikov, E. V., 2 Mar 2018, In: Journal of Physics: Conference Series. 964, 1, 5 p., 012008.

    Research output: Contribution to journal › Conference article › peer-review

  6. Shapes of the micron-sized SiGe islands grown on Si(100) in Dewetting Conditions

    Budazhapova, A. E. & Shklyaev, A. A., 13 Aug 2018, 2018 19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2018 - Proceedings. IEEE Computer Society, Vol. 2018-July. p. 16-18 3 p. 8434951

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

  7. Kelvin force and Raman microscopies of flat SiGe structures with different compositions grown on Si(111) at high temperatures

    Shklyaev, A. A., Bolotov, L., Poborchii, V., Tada, T. & Romanyuk, K. N., 15 Aug 2018, In: Materials Science in Semiconductor Processing. 83, p. 107-114 8 p.

    Research output: Contribution to journal › Article › peer-review

  8. 2019

  9. Electromigration effect on the surface morphology during the Ge deposition on Si(1 1 1) at high temperatures

    Shklyaev, A. A. & Latyshev, A. V., 28 Jan 2019, In: Applied Surface Science. 465, p. 10-14 5 p.

    Research output: Contribution to journal › Article › peer-review

  10. On-chip Piezoelectric Actuation of Nanomechanical Resonators Containing a Two-dimensional Electron Gas

    Shevyrin, A. A., Bakarov, A. K., Shklyaev, A. A., Arakcheev, A. S., Kurosu, M., Yamaguchi, H. & Pogosov, A. G., 1 Feb 2019, In: JETP Letters. 109, 4, p. 261-265 5 p.

    Research output: Contribution to journal › Article › peer-review

  11. Nanoscale characterization of photonic metasurface made of lens-like SiGe Mie-resonators formed on Si (100) substrate

    Poborchii, V., Shklyaev, A., Bolotov, L. & Uchida, N., 28 Sept 2019, In: Journal of Applied Physics. 126, 12, 11 p., 123102.

    Research output: Contribution to journal › Article › peer-review

  12. Suspended quantum point contact with triple channel selectively driven by side gates

    Pokhabov, D. A., Pogosov, A. G., Zhdanov, E. Y., Bakarov, A. K. & Shklyaev, A. A., 7 Oct 2019, In: Applied Physics Letters. 115, 15, 152101.

    Research output: Contribution to journal › Article › peer-review

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