1 - 10 out of 17Page size: 10
  1. 2023

  2. Effect of n- and p-Doping on Vacancy Formation in Cationic and Anionic Sublattices of (In,Al)As/AlAs and Al(Sb,As)/AlAs Heterostructures

    Shamirzaev, T. S. & Atuchin, V. V., 23 Jul 2023, In: Nanomaterials. 13, 14, 2136.

    Research output: Contribution to journal › Article › peer-review

  3. Optical Orientation of Excitons in a Longitudinal Magnetic Field in Indirect-Band-Gap (In,Al)As/AlAs Quantum Dots with Type-I Band Alignment

    Shamirzaev, T. S., Shumilin, A. V., Smirnov, D. S., Kudlacik, D., Nekrasov, S. V., Kusrayev, Y. G., Yakovlev, D. R. & Bayer, M., 14 Feb 2023, In: Nanomaterials. 13, 4, 729.

    Research output: Contribution to journal › Article › peer-review

  4. Dynamics of Vacancy Formation and Distribution in Semiconductor Heterostructures: Effect of Thermally Generated Intrinsic Electrons

    Shamirzaev, T. S., Atuchin, V. V., Zhilitskiy, V. E. & Gornov, A. Y., 11 Jan 2023, In: Nanomaterials. 13, 2, 308.

    Research output: Contribution to journal › Article › peer-review

  5. 2022

  6. New Spin-Polarized Electron Source Based on Alkali Antimonide Photocathode

    Rusetsky, V. S., Golyashov, V. A., Eremeev, S. V., Kustov, D. A., Rusinov, I. P., Shamirzaev, T. S., Mironov, A. V., Demin, A. Y. & Tereshchenko, O. E., 14 Oct 2022, In: Physical Review Letters. 129, 16, 166802.

    Research output: Contribution to journal › Article › peer-review

  7. 2020

  8. Spectral detection of spin-polarized ultra low-energy electrons in semiconductor heterostructures

    Golyashov, V. A., Rusetsky, V. S., Shamirzaev, T. S., Dmitriev, D. V., Kislykh, N. V., Mironov, A. V., Aksenov, V. V. & Tereshchenko, O. E., 1 Nov 2020, In: Ultramicroscopy. 218, 8 p., 113076.

    Research output: Contribution to journal › Article › peer-review

  9. 2019

  10. GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates

    Abramkin, D. S., Petrushkov, M. O., Putyato, M. A., Semyagin, B. R., Emelyanov, E. A., Preobrazhenskii, V. V., Gutakovskii, A. K. & Shamirzaev, T. S., 1 Sept 2019, In: Semiconductors. 53, 9, p. 1143-1147 5 p.

    Research output: Contribution to journal › Article › peer-review

  11. Type-I Indirect-Gap Semiconductor Heterostructures on (110) Substrates

    Abramkin, D. S. & Shamirzaev, T. S., 1 May 2019, In: Semiconductors. 53, 5, p. 703-710 8 p.

    Research output: Contribution to journal › Article › peer-review

  12. 2018

  13. Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates

    Abramkin, D. S., Petrushkov, M. O., Putyato, M. A., Semyagin, B. R. & Shamirzaev, T. S., 1 Nov 2018, In: Semiconductors. 52, 11, p. 1484-1490 7 p.

    Research output: Contribution to journal › Article › peer-review

  14. Spinodal Decomposition in InSb/AlAs Heterostructures

    Abramkin, D. S., Bakarov, A. K., Gutakovskii, A. K. & Shamirzaev, T. S., 1 Nov 2018, In: Semiconductors. 52, 11, p. 1392-1397 6 p.

    Research output: Contribution to journal › Article › peer-review

  15. Heterostructures with diffused interfaces: Luminescent technique for ascertainment of band alignment type

    Abramkin, D. S., Gutakovskii, A. K. & Shamirzaev, T. S., 21 Mar 2018, In: Journal of Applied Physics. 123, 11, 11 p., 115701.

    Research output: Contribution to journal › Article › peer-review

Previous 1 2 Next

ID: 3444977