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  1. A room-temperature-operated Si LED with β-FeSi2 nanocrystals in the active layer: μW emission power at 1.5 μm

    Shevlyagin, A. V., Goroshko, D. L., Chusovitin, E. A., Balagan, S. A., Dotcenko, S. A., Galkin, K. N., Galkin, N. G., Shamirzaev, T. S., Gutakovskii, A. K., Latyshev, A. V., Iinuma, M. & Terai, Y., 21 Mar 2017, In: Journal of Applied Physics. 121, 11, 9 p., 113101.

    Research output: Contribution to journal › Article › peer-review

  2. Determining the structure of energy in heterostructures with diffuse interfaces

    Abramkin, D. S., Bakarov, A. K., Kolotovkina, D. A., Gutakovskii, A. K. & Shamirzaev, T. S., 1 Sept 2017, In: Bulletin of the Russian Academy of Sciences: Physics. 81, 9, p. 1052-1057 6 p.

    Research output: Contribution to journal › Article › peer-review

  3. Dynamics of Vacancy Formation and Distribution in Semiconductor Heterostructures: Effect of Thermally Generated Intrinsic Electrons

    Shamirzaev, T. S., Atuchin, V. V., Zhilitskiy, V. E. & Gornov, A. Y., 11 Jan 2023, In: Nanomaterials. 13, 2, 308.

    Research output: Contribution to journal › Article › peer-review

  4. Effect of n- and p-Doping on Vacancy Formation in Cationic and Anionic Sublattices of (In,Al)As/AlAs and Al(Sb,As)/AlAs Heterostructures

    Shamirzaev, T. S. & Atuchin, V. V., 23 Jul 2023, In: Nanomaterials. 13, 14, 2136.

    Research output: Contribution to journal › Article › peer-review

  5. Formation of low-dimensional structures in the InSb/AlAs heterosystem

    Abramkin, D. S., Bakarov, A. K., Putyato, M. A., Emelyanov, E. A., Kolotovkina, D. A., Gutakovskii, A. K. & Shamirzaev, T. S., 1 Sept 2017, In: Semiconductors. 51, 9, p. 1233-1239 7 p.

    Research output: Contribution to journal › Article › peer-review

  6. GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates

    Abramkin, D. S., Petrushkov, M. O., Putyato, M. A., Semyagin, B. R., Emelyanov, E. A., Preobrazhenskii, V. V., Gutakovskii, A. K. & Shamirzaev, T. S., 1 Sept 2019, In: Semiconductors. 53, 9, p. 1143-1147 5 p.

    Research output: Contribution to journal › Article › peer-review

  7. Heterostructures with diffused interfaces: Luminescent technique for ascertainment of band alignment type

    Abramkin, D. S., Gutakovskii, A. K. & Shamirzaev, T. S., 21 Mar 2018, In: Journal of Applied Physics. 123, 11, 11 p., 115701.

    Research output: Contribution to journal › Article › peer-review

  8. Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates

    Abramkin, D. S., Petrushkov, M. O., Putyato, M. A., Semyagin, B. R. & Shamirzaev, T. S., 1 Nov 2018, In: Semiconductors. 52, 11, p. 1484-1490 7 p.

    Research output: Contribution to journal › Article › peer-review

  9. Influence of a Low-Temperature GaAs Dislocation Filter on the Perfection of GaAs/Si Layers

    Abramkin, D. S., Petrushkov, M. O., Emel’yanov, E. A., Putyato, M. A., Semyagin, B. R., Vasev, A. V., Esin, M. Y., Loshkarev, I. D., Gutakovskii, A. K., Preobrazhenskii, V. V. & Shamirzaev, T. S., 1 Mar 2018, In: Optoelectronics, Instrumentation and Data Processing. 54, 2, p. 181-186 6 p.

    Research output: Contribution to journal › Article › peer-review

  10. Luminescence of a near-surface GaAs/AlAs heterojunction in AlAs-based heterostructures

    Nikiforov, V. E., Abramkin, D. S. & Shamirzaev, T. S., 1 Nov 2017, In: Semiconductors. 51, 11, p. 1513-1516 4 p.

    Research output: Contribution to journal › Article › peer-review

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