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  1. Optical gain and stimulated emission in optically pumped heavily doped Al0.74Ga0.26N:Si structures with external cavity

    Bokhan, P. A., Fateev, N. V., Malin, T. V., Osinnykh, I. V., Zakrevsky, D. E. & Zhuravlev, K. S., Jul 2020, In: Optical Materials. 105, 5 p., 109879.

    Research output: Contribution to journal › Article › peer-review

  2. Optical Gain in Heavily Doped AlxGa1 – xN:Si Structures

    Bokhan, P. A., Zhuravlev, K. S., Zakrevsky, D. E., Malin, T. V., Osinnykh, I. V. & Fateev, N. V., 1 Sept 2019, In: Technical Physics Letters. 45, 9, p. 951-954 4 p.

    Research output: Contribution to journal › Article › peer-review

  3. Properties of intensive defect-related band in photoluminescence spectra of heavily doped AlxGa1-xN: Si layers

    Osinnykh, I. V., Malin, T. V., Plyusnin, V. F. & Zhuravlev, K. S., 15 Aug 2017, In: Journal of Physics: Conference Series. 864, 1, 5 p., 012071.

    Research output: Contribution to journal › Article › peer-review

  4. Radiation enhancement in doped AlGaN-structures upon optical pumping

    Bokhan, P. A., Zhuravlev, K. S., Zakrevsky, D. E., Malin, T. V., Osinnykh, I. V. & Fateev, N. V., 1 Jan 2017, In: Technical Physics Letters. 43, 1, p. 46-49 4 p.

    Research output: Contribution to journal › Article › peer-review

  5. Stimulated emission in heavily doped Al0.68Ga0.32N:Si structures with external cavity

    Bokhan, P. A., Fateev, N. V., Malin, T. V., Osinnykh, I. V., Zakrevsky, D. E. & Zhuravlev, K. S., Dec 2022, In: Journal of Luminescence. 252, 119392.

    Research output: Contribution to journal › Article › peer-review

  6. Transformation of N-Polar Inversion Domains from AlN Buffer Layers during the Growth of AlGaN Layers

    Osinnykh, I. V., Malin, T. V., Kozhukhov, A. S., Ber, B. Y., Kazancev, D. Y. & Zhuravlev, K. S., Jun 2022, In: Semiconductors. 56, 6, p. 352-359 8 p.

    Research output: Contribution to journal › Article › peer-review

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