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  1. Influence of formation conditions and annealing on the parameters of Pt/InAlAs Schottky barriers

    Genze, I. Y., Aksenov, M. S., Paramonova, M. A., Dmitriev, D. V. & Zhuravlev, K. S., 1 Feb 2024, In: Journal of Optical Technology (A Translation of Opticheskii Zhurnal). 91, 2, p. 83-85 3 p.

    Research output: Contribution to journal › Article › peer-review

  2. Influence of quantizing magnetic field and Rashba effect on indium arsenide metal-oxide-semiconductor structure accumulation capacitance

    Kovchavtsev, A. P., Aksenov, M. S., Tsarenko, A. V., Nastovjak, A. E., Pogosov, A. G., Pokhabov, D. A., Tereshchenko, O. E. & Valisheva, N. A., 7 May 2018, In: Journal of Applied Physics. 123, 17, 6 p., 173901.

    Research output: Contribution to journal › Article › peer-review

  3. Nonlinear Hall Coefficient in Films of a Three-Dimensional Topological Insulator

    Stepina, N. P., Bazhenov, A. O., Shumilin, A. V., Zhdanov, E. Y., Ishchenko, D. V., Kirienko, V. V., Aksenov, M. S. & Tereshchenko, O. E., Aug 2024, In: JETP Letters. 120, 3, p. 199-204 6 p.

    Research output: Contribution to journal › Article › peer-review

  4. Optical properties of native (anodic) layer on the InAlAs surface of different morphology

    Valisheva, N. A., Kruchinin, V. N., Aksenov, M. S., Azarov, I. A. & Nedomolkina, A. A., 30 Jun 2021, In: Thin Solid Films. 728, 138692.

    Research output: Contribution to journal › Article › peer-review

  5. Study of the Density of Interface States at the Insulator/In0.52Al0.48As Interface

    Kovchavtsev, A. P., Aksenov, M. S., Nastov’yak, A. E., Valisheva, N. A., Gorshkov, D. V., Sidorov, G. Y. & Dmitriev, D. V., 1 May 2020, In: Technical Physics Letters. 46, 5, p. 469-472 4 p.

    Research output: Contribution to journal › Article › peer-review

  6. The Effect of Fluorine on the Density of States at the Anodic Oxide Layer/In0.53Ga0.47As Interface

    Aksenov, M. S., Valisheva, N. A. & Kovchavtsev, A. P., Jun 2021, In: Technical Physics Letters. 47, 6, p. 478-481 4 p.

    Research output: Contribution to journal › Article › peer-review

  7. The Influence of the InAlAs Layer Surface Morphology on the Temperature Dependence of Parameters of Au/Ti/n-InAlAs(001) Schottky Diodes

    Chistokhin, I. B., Aksenov, M. S., Valisheva, N. A., Dmitriev, D. V., Marchishin, I. V., Toropov, A. I. & Zhuravlev, K. S., 1 Feb 2019, In: Technical Physics Letters. 45, 2, p. 180-184 5 p.

    Research output: Contribution to journal › Article › peer-review

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