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  1. 2024

  2. Na2KSb/CsxSb interface engineering for high-efficiency photocathodes

    Rozhkov, S. A., Bakin, V. V., Rusetsky, V. S., Kustov, D. A., Golyashov, V. A., Demin, A. Y., Scheibler, H. E., Alperovich, V. L. & Tereshchenko, O. E., 2 Aug 2024, In: Physical Review Applied. 22, 2, 024008.

    Research output: Contribution to journal › Article › peer-review

  3. 2020

  4. The increase in band bending at the p-GaN(Cs) - Vacuum interface due to the photoemission from surface states

    Rozhkov, S. A., Bakin, V. V., Kosolobov, S. N., Scheibler, H. E. & Terekhov, A. S., 1 Mar 2020, In: Journal of Physics: Conference Series. 1482, 1, 012008.

    Research output: Contribution to journal › Conference article › peer-review

  5. 2019

  6. Surface photovoltage in a p-GaN(Cs) photocathode

    Rozhkov, S. A., Bakin, V. V., Gorshkov, D. V., Kosolobov, S. N. & Scheibler, H. E., 17 Apr 2019, In: Journal of Physics: Conference Series. 1199, 1, 012031.

    Research output: Contribution to journal › Conference article › peer-review

  7. 2018

  8. Atomic Rearrangements and Photoemission Processes at a p-GaN(Cs)–Vacuum Interface

    Bakin, V. V., Kosolobov, S. N., Rozhkov, S. A., Scheibler, H. E. & Terekhov, A. S., 1 Aug 2018, In: JETP Letters. 108, 3, p. 180-184 5 p.

    Research output: Contribution to journal › Article › peer-review

  9. Photoelectron scattering in a p-GaN(Cs,O) photocathode

    Rozhkov, S. A., Bakin, V. V., Kosolobov, S. N., Scheibler, H. E. & Terekhov, A. S., 10 Apr 2018, In: Journal of Physics: Conference Series. 993, 1, 7 p., 012027.

    Research output: Contribution to journal › Conference article › peer-review

ID: 3438605