• S. A. Rozhkov
  • V. V. Bakin
  • S. N. Kosolobov
  • H. E. Scheibler
  • A. S. Terekhov
Original languageEnglish
Article number012027
Number of pages7
JournalJournal of Physics: Conference Series
Volume993
Issue number1
DOIs
Publication statusPublished - 10 Apr 2018
Event19th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2017 - St. Petersburg, Russian Federation
Duration: 27 Nov 20171 Dec 2017

    Research areas

  • NEGATIVE ELECTRON-AFFINITY, GAN, BAND, INTERFACE

    OECD FOS+WOS

ID: 12916470