Theoretical and experimental determination of work function of HfIrxBy compounds

Lozanov, V. V., Nikiforov, Y. A., Golosov, M. A., Utkin, A. V., Golyashov, V. A., Kistanov, A. A., Tereshchenko, O. E. & Baklanova, N. I., 30 Jan 2026, In: Applied Surface Science. 716, 12 p., 164629.

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Effect of indium embedding on molecular-beam epitaxial growth of Pb1−xSnxTe

Ishchenko, D. V., Molodtsova, E. L., Suprun, S. P., Kyrova, E. D., Fedosenko, E. V. & Tereshchenko, O. E., 8 Sept 2025, In: Applied Physics Letters. 127, 10, 6 p., 103107.

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Chemically prepared tellurium layer on PbSnTe films: passivation and oxidation properties

Akhundov, I. O., Ishchenko, D. V., Fedosenko, E. V., Golyashov, V. A., Shvets, V. A., Suprun, S. P., Kyrova, E. D., Mikaeva, A. S. & Tereshchenko, O. E., 15 Aug 2025, In: Surfaces and Interfaces. 71, 8 p., 106887.

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Direct Spin-Imaging Detector Based on Freestanding Magnetic Nanomembranes

Tereshchenko, O. E., Bakin, V. V., Stepanov, S. A., Golyashov, V. A., Mikaeva, A. S., Kustov, D. A., Rusetsky, V. S., Rozhkov, S. A., Scheibler, H. E. & Demin, A. Y., 18 Apr 2025, In: Physical Review Letters. 134, 15, 157002.

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Surface Fermi level tuning in thin epitaxial BiySb2−yTe3−xSex/Si(111) films

Stepina, N. P., Golyashov, V. A., Bazhenov, A. O., Ishchenko, D. V., Kumar, N., Shumilin, A. V. & Tereshchenko, O. E., 2025, In: Applied Physics Letters. 126, 22, 223102.

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Resonance Raman Scattering of Topological Insulators Bi2Te3 and Bi2 − xSbxTe3 − ySey Thin Films

Kumar, N., Surovtsev, N. V., Ishchenko, D. V., Yunin, P. A., Milekhin, I. A., Tereshchenko, O. E. & Milekhin, A. G., 26 Nov 2024, In: Journal of Raman Spectroscopy. 10 p.

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Polarization-resolved resonant Raman excitation of surface and bulk electronic bands and phonons in MBE-grown topological insulator thin films

Kumar, N., Ishchenko, D. V., Milekhin, I. A., Yunin, P. A., Kyrova, E. D., Korsakov, A. V. & Tereshchenko, O. E., 5 Nov 2024, In: Physical Chemistry Chemical Physics. 26, 46, p. 29036-29047 12 p.

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Na2KSb/CsxSb interface engineering for high-efficiency photocathodes

Rozhkov, S. A., Bakin, V. V., Rusetsky, V. S., Kustov, D. A., Golyashov, V. A., Demin, A. Y., Scheibler, H. E., Alperovich, V. L. & Tereshchenko, O. E., 2 Aug 2024, In: Physical Review Applied. 22, 2, 024008.

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Interfacing two-dimensional and magnetic topological insulators: Bi bilayer on MnBi2Te4-family materials

Klimovskikh, I. I., Eremeev, S. V., Estyunin, D. A., Filnov, S. O., Shimada, K., Golyashov, V. A., Solovova, N. Y., Tereshchenko, O. E., Kokh, K. A., Frolov, A. S., Sergeev, A. I., Stolyarov, V. S., Trontl, V. M., Petaccia, L., Di Santo, G., Tallarida, M., Dai, J., Blanco-Canosa, S., Valla, T., Shikin, A. M., & 1 othersChulkov, E. V., Aug 2024, In: Materials Today Advances. 23, 9 p., 100511.

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Nonlinear Hall Coefficient in Films of a Three-Dimensional Topological Insulator

Stepina, N. P., Bazhenov, A. O., Shumilin, A. V., Zhdanov, E. Y., Ishchenko, D. V., Kirienko, V. V., Aksenov, M. S. & Tereshchenko, O. E., Aug 2024, In: JETP Letters. 120, 3, p. 199-204 6 p.

Research output: Contribution to journal › Article › peer-review