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  1. 2019

  2. Electron Paramagnetic Resonance in Ge/Si Heterostructures with Mn-Doped Quantum Dots

    Zinovieva, A. F., Zinovyev, V. A., Stepina, N. P., Katsuba, A. V., Dvurechenskii, A. V., Gutakovskii, A. K., Kulik, L. V., Bogomyakov, A. S., Erenburg, S. B., Trubina, S. V. & Voelskow, M., 1 Feb 2019, In: JETP Letters. 109, 4, p. 270-275 6 p.

    Research output: Contribution to journal › Article › peer-review

  3. Plasmon Enhancement of the Electric Field in Mid-Infrared Ge/Si Quantum-Dot Photodetectors with Different Thicknesses of the Active Region

    Bloshkin, A. A., Yakimov, A. I. & Dvurechenskii, A. V., 1 Feb 2019, In: Semiconductors. 53, 2, p. 195-199 5 p.

    Research output: Contribution to journal › Article › peer-review

  4. 2018

  5. Plasmonic Enhancement of the Photoluminescence in Hybrid Structures with SiGe Quantum Dots and Ag Nanoislands

    Zinovyev, V. A., Zinovieva, A. F., Katsuba, A. V., Smagina, Z. V., Dvurechenskii, A. V., Borodavchenko, O. M., Zhivulko, V. D. & Mudryi, A. V., 1 Dec 2018, In: Semiconductors. 52, 16, p. 2149-2152 4 p.

    Research output: Contribution to journal › Article › peer-review

  6. Nucleation of Three-Dimensional Ge Islands on a Patterned Si(100) Surface

    Rudin, S. A., Smagina, Z. V., Zinovyev, V. A., Novikov, P. L., Nenashev, A. V., Rodyakina, E. E. & Dvurechenskii, A. V., 1 Nov 2018, In: Semiconductors. 52, 11, p. 1457-1461 5 p.

    Research output: Contribution to journal › Article › peer-review

  7. Release of carriers from traps enhanced by hopping

    Nenashev, A. V., Valkovskii, V. V., Oelerich, J. O., Dvurechenskii, A. V., Semeniuk, O., Reznik, A., Gebhard, F. & Baranovskii, S. D., 30 Oct 2018, In: Physical Review B. 98, 15, 10 p., 155207.

    Research output: Contribution to journal › Article › peer-review

  8. Analytical Expression for the Distribution of Elastic Strain Created by a Polyhedral Inclusion with Arbitrary Eigenstrain

    Nenashev, A. V. & Dvurechenskii, A. V., 1 Sept 2018, In: Physics of the Solid State. 60, 9, p. 1807-1812 6 p.

    Research output: Contribution to journal › Article › peer-review

  9. Study of the Structural and Emission Properties of Ge(Si) Quantum Dots Ordered on the Si(001) Surface

    Smagina, Z. V., Zinovyev, V. A., Krivyakin, G. K., Rodyakina, E. E., Kuchinskaya, P. A., Fomin, B. I., Yablonskiy, A. N., Stepikhova, M. V., Novikov, A. V. & Dvurechenskii, A. V., 1 Sept 2018, In: Semiconductors. 52, 9, p. 1150-1155 6 p.

    Research output: Contribution to journal › Article › peer-review

  10. Field-enhanced mobility in the multiple-trapping regime

    Nenashev, A. V., Oelerich, J. O., Jandieri, K., Valkovskii, V. V., Semeniuk, O., Dvurechenskii, A. V., Gebhard, F., Juška, G., Reznik, A. & Baranovskii, S. D., 3 Jul 2018, In: Physical Review B. 98, 3, 8 p., 035201.

    Research output: Contribution to journal › Article › peer-review

  11. Quantum Gates with Spin States in Continuous Microwave Field

    Zinovieva, A. F., Nenashev, A. V., Koshkarev, A. A., Zarodnyuk, T. S., Gornov, A. Y. & Dvurechenskii, A. V., 1 Jul 2018, In: Russian Microelectronics. 47, 4, p. 268-278 11 p.

    Research output: Contribution to journal › Article › peer-review

  12. Nucleation sites of Ge nanoislands grown on pit-patterned Si substrate prepared by electron-beam lithography

    Smagina, Z. V., Zinovyev, V. A., Rudin, S. A., Novikov, P. L., Rodyakina, E. E. & Dvurechenskii, A. V., 28 Apr 2018, In: Journal of Applied Physics. 123, 16, 5 p., 165302.

    Research output: Contribution to journal › Article › peer-review

  13. Approximate analytical description of the elastic strain field due to an inclusion in a continuous medium with cubic anisotropy

    Nenashev, A. V., Koshkarev, A. A. & Dvurechenskii, A. V., 14 Mar 2018, In: Journal of Applied Physics. 123, 10, 11 p., 105104.

    Research output: Contribution to journal › Article › peer-review

  14. Energy spectrum of charge carriers in elastically strained assemblies of Ge/Si quantum dots

    Bloshkin, A. A., Yakimov, A. I., Zinovieva, A. F., Zinoviev, V. A. & Dvurechenskii, A. V., Mar 2018, In: Journal of Surface Investigation. 12, 2, p. 306-316 11 p.

    Research output: Contribution to journal › Article › peer-review

  15. Enhanced optical properties of silicon based quantum dot heterostructures

    Dvurechenskii, A., Yakimov, A., Kirienko, V., Bloshkin, A., Zinovyev, V., Zinovieva, A. & Mudryi, A., 1 Jan 2018, Physics and Technology of Nanostructured Materials. Trans Tech Publications Ltd, Vol. 386 DDF. p. 68-74 7 p.

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

  16. 2017

  17. Effect of Interstitials Embedded in Pre-Patterned Si Substrate on Location of Ge Nanoislands

    Novikov, P. L., Atovullaev, T., Smagina, Z. V., Dvurechenskii, A. V. & Pavskii, K. V., 1 Dec 2017, In: Physica Status Solidi (C) Current Topics in Solid State Physics. 14, 12, 4 p., 1700200.

    Research output: Contribution to journal › Article › peer-review

  18. Photoluminescence from Ordered Ge/Si Quantum Dot Groups Grown on the Strain-Patterned Substrates

    Dvurechenskii, A., Zinovieva, A., Zinovyev, V., Nenashev, A., Smagina, Z., Teys, S., Shklyaev, A., Erenburg, S., Trubina, S., Borodavchenko, O., Zhivulko, V. & Mudryi, A., 1 Dec 2017, In: Physica Status Solidi (C) Current Topics in Solid State Physics. 14, 12, 6 p., 1700187.

    Research output: Contribution to journal › Article › peer-review

  19. Field dependence of hopping mobility: Lattice models against spatial disorder

    Oelerich, J. O., Nenashev, A. V., Dvurechenskii, A. V., Gebhard, F. & Baranovskii, S. D., 21 Nov 2017, In: Physical Review B. 96, 19, 9 p., 195208.

    Research output: Contribution to journal › Article › peer-review

  20. Plasmon polariton enhanced mid-infrared photodetectors based on Ge quantum dots in Si

    Yakimov, A. I., Kirienko, V. V., Bloshkin, A. A., Armbrister, V. A. & Dvurechenskii, A. V., 7 Oct 2017, In: Journal of Applied Physics. 122, 13, 7 p., 133101.

    Research output: Contribution to journal › Article › peer-review

  21. Hall effect in hopping conduction in an ensemble of quantum dots

    Stepina, N. P., Nenashev, A. V. & Dvurechenskii, A. V., 1 Sept 2017, In: JETP Letters. 106, 5, p. 308-312 5 p.

    Research output: Contribution to journal › Article › peer-review

  22. Fundamental characteristic length scale for the field dependence of hopping charge transport in disordered organic semiconductors

    Nenashev, A. V., Oelerich, J. O., Dvurechenskii, A. V., Gebhard, F. & Baranovskii, S. D., 21 Jul 2017, In: Physical Review B. 96, 3, 7 p., 035204.

    Research output: Contribution to journal › Article › peer-review

  23. Spin relaxation in Si nanoclusters embedded in free-standing SiGe nanocolumns

    Stepina, N. P., Zinovieva, A. F., Dvurechenskii, A. V., Noda, S., Molla, M. Z. & Samukawa, S., 15 May 2017, In: Applied Physics Letters. 110, 20, 4 p., 203103.

    Research output: Contribution to journal › Article › peer-review

  24. Selective enhancement of the hole photocurrent by surface plasmon–polaritons in layers of Ge/Si quantum dots

    Yakimov, A. I., Kirienko, V. V., Armbrister, V. A. & Dvurechenskii, A. V., 1 Apr 2017, In: JETP Letters. 105, 7, p. 426-429 4 p.

    Research output: Contribution to journal › Article › peer-review

  25. Analytical theory for charge carrier recombination in blend organic solar cells

    Nenashev, A. V., Wiemer, M., Dvurechenskii, A. V., Kulik, L. V., Pevtsov, A. B., Gebhard, F., Koch, M. & Baranovskii, S. D., 28 Mar 2017, In: Physical Review B. 95, 10, 12 p., 104207.

    Research output: Contribution to journal › Article › peer-review

  26. Elastic strain field due to an inclusion of a polyhedral shape with a non-uniform lattice misfit

    Nenashev, A. V. & Dvurechenskii, A. V., 28 Mar 2017, In: Journal of Applied Physics. 121, 12, 19 p., 125102.

    Research output: Contribution to journal › Article › peer-review

  27. ESR Study of Electron States in Ge/Si Heterostructures with Nanodisc Shaped Quantum Dots

    Zinovieva, A. F., Zinovyev, V. A., Nenashev, A. V., Kulik, L. V. & Dvurechenskii, A. V., 1 Feb 2017, In: Zeitschrift fur Physikalische Chemie. 231, 2, p. 405-423 19 p.

    Research output: Contribution to journal › Article › peer-review

  28. Preface

    Latyshev, A. V., Dvurechenskii, A. V. & Aseev, A. L., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Elsevier Science Publishing Company, Inc., p. xxiii-xxiv

    Research output: Chapter in Book/Report/Conference proceeding › Foreword/postscript › Research › peer-review

  29. Preface

    Latyshev, A. V., Dvurechenskii, A. V. & Aseev, A. L., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Elsevier Science Publishing Company, Inc., p. xxiii-xxiv

    Research output: Chapter in Book/Report/Conference proceeding › Foreword/postscript › Research › peer-review

  30. Silicon-Based Nanoheterostructures With Quantum Dots

    Dvurechenskii, A. V. & Yakimov, A. I., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Publishing Company, Inc., p. 59-99 41 p.

    Research output: Chapter in Book/Report/Conference proceeding › Chapter › Research › peer-review

  31. The Energy Pulse-Oriented Crystallization Phenomenon in Solids (Laser Annealing)

    Dvurechenskii, A. V., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Publishing Company, Inc., p. 367-381 15 p.

    Research output: Chapter in Book/Report/Conference proceeding › Chapter › Research › peer-review

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