Energy spectrum of charge carriers in elastically strained assemblies of Ge/Si quantum dots

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	306-316
Number of pages	11
Journal	Journal of Surface Investigation
Volume	12
Issue number	2
DOIs	https://doi.org/10.1134/S1027451018020210
Publication status	Published - Mar 2018

Elastic strain, Ge/Si heterostructure, Nanocrystal, Quantum dot, TRANSISTOR, SINGLE, PHOTOLUMINESCENCE, SIMULATION, FLASH MEMORY, DEPENDENCE, nanocrystal, BAND LINEUPS, TEMPERATURE, quantum dot, CRYSTALS, elastic strain, ELECTRONIC-STRUCTURE

ID: 19072462