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  1. Laser annealing of epitaxial CaF2 films on Si

    Dvurechenskii, A. V., Smagina, Z. V., Volodin, V. A., Kacyuba, A. V., Zinovyev, V. A., Ivlev, G. D. & Prakopyeu, S. L., 1 Oct 2021, In: Thin Solid Films. 735, 138898.

    Research output: Contribution to journal › Article › peer-review

  2. Increase in the Photocurrent in Layers of Ge/Si Quantum Dots by Modes of a Two-Dimensional Photonic Crystal

    Yakimov, A. I., Bloshkin, A. A., Kirienko, V. V., Dvurechenskii, A. V. & Utkin, D. E., Apr 2021, In: JETP Letters. 113, 8, p. 498-503 6 p.

    Research output: Contribution to journal › Article › peer-review

  3. Hall effect in hopping conduction in an ensemble of quantum dots

    Stepina, N. P., Nenashev, A. V. & Dvurechenskii, A. V., 1 Sept 2017, In: JETP Letters. 106, 5, p. 308-312 5 p.

    Research output: Contribution to journal › Article › peer-review

  4. Growth of Silicene by Molecular Beam Epitaxy on CaF2/Si(111) Substrates Modified by Electron Irradiation

    Zinovieva, A. F., Zinovyev, V. A., Katsyuba, A. V., Volodin, V. A., Muratov, V. I. & Dvurechenskii, A. V., May 2024, In: JETP Letters. 119, 9, p. 703-707 5 p.

    Research output: Contribution to journal › Article › peer-review

  5. Fundamental characteristic length scale for the field dependence of hopping charge transport in disordered organic semiconductors

    Nenashev, A. V., Oelerich, J. O., Dvurechenskii, A. V., Gebhard, F. & Baranovskii, S. D., 21 Jul 2017, In: Physical Review B. 96, 3, 7 p., 035204.

    Research output: Contribution to journal › Article › peer-review

  6. Field-enhanced mobility in the multiple-trapping regime

    Nenashev, A. V., Oelerich, J. O., Jandieri, K., Valkovskii, V. V., Semeniuk, O., Dvurechenskii, A. V., Gebhard, F., Juška, G., Reznik, A. & Baranovskii, S. D., 3 Jul 2018, In: Physical Review B. 98, 3, 8 p., 035201.

    Research output: Contribution to journal › Article › peer-review

  7. Field dependence of hopping mobility: Lattice models against spatial disorder

    Oelerich, J. O., Nenashev, A. V., Dvurechenskii, A. V., Gebhard, F. & Baranovskii, S. D., 21 Nov 2017, In: Physical Review B. 96, 19, 9 p., 195208.

    Research output: Contribution to journal › Article › peer-review

  8. ESR Study of Electron States in Ge/Si Heterostructures with Nanodisc Shaped Quantum Dots

    Zinovieva, A. F., Zinovyev, V. A., Nenashev, A. V., Kulik, L. V. & Dvurechenskii, A. V., 1 Feb 2017, In: Zeitschrift fur Physikalische Chemie. 231, 2, p. 405-423 19 p.

    Research output: Contribution to journal › Article › peer-review

  9. Enhanced optical properties of silicon based quantum dot heterostructures

    Dvurechenskii, A., Yakimov, A., Kirienko, V., Bloshkin, A., Zinovyev, V., Zinovieva, A. & Mudryi, A., 1 Jan 2018, Physics and Technology of Nanostructured Materials. Trans Tech Publications Ltd, Vol. 386 DDF. p. 68-74 7 p.

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

  10. Energy Surface of Pit-Patterned Templates for Growth of Space-Arranged Arrays of Quantum Dots - Molecular Dynamics Calculations Using High-Efficiency Algorithms

    Novikov, P. L., Dvurechenskii, A. V. & Pavsky, K. V., Oct 2019, 2019 International Multi-Conference on Industrial Engineering and Modern Technologies, FarEastCon 2019. Institute of Electrical and Electronics Engineers Inc., 8934013. (2019 International Multi-Conference on Industrial Engineering and Modern Technologies, FarEastCon 2019).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

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