1. 2023
  2. Observation of different edge current states localization scenarios in a HgTe based two-dimensional topological insulator

    Olshanetsky, E. B., Kvon, Z. D., Gusev, G. M. & Mikhailov, N. N., Mar 2023, In: Physica E: Low-Dimensional Systems and Nanostructures. 147, 115605.

    Research output: Contribution to journalArticlepeer-review

  3. Импульсный терагерцовый спектрометр с полупроводниковым генератором на эффекте модуляции приповерхностного поля

    Шевченко, О. Н., Николаев, Н. А. & Терещенко, О. Е., 6 Feb 2023, Роспатент - Федеральная служба по интеллектуальной собственности, Patent No. 2789628, 16 Jun 2022, Priority date 16 Jun 2022, Priority No. 2022116206

    Research output: PatentPatent for invention

  4. Quantum states in disordered media. II. Spatial charge carrier distribution

    Nenashev, A. V., Baranovskii, S. D., Meerholz, K. & Gebhard, F., 1 Feb 2023, In: Physical Review B. 107, 6, 23 p., 064207.

    Research output: Contribution to journalArticlepeer-review

  5. Photonic crystal band structure in luminescence response of samples with Ge/Si quantum dots grown on pit-patterned SOI substrates

    Peretokin, A. V., Stepikhova, M. V., Novikov, A. V., Dyakov, S. A., Zinovieva, A. F., Smagina, Z. V., Nasimov, D. A., Rodyakina, E. E. & Zinovyev, V. A., Feb 2023, In: Photonics and Nanostructures - Fundamentals and Applications. 53, 101093.

    Research output: Contribution to journalArticlepeer-review

  6. Scanning of Electronic States in a Quantum Point Contact Using Asymmetrically Biased Side Gates

    Pokhabov, D. A., Pogosov, A. G., Zhdanov, E. Y. & Bakarov, A. K., Feb 2023, In: JETP Letters. 117, 4, p. 299-305 7 p.

    Research output: Contribution to journalArticlepeer-review

  7. Topological Phase Transitions Driven by Sn Doping in (Mn1−xSnx)Bi2Te4

    Tarasov, A. V., Makarova, T. P., Estyunin, D. A., Eryzhenkov, A. V., Klimovskikh, I. I., Golyashov, V. A., Kokh, K. A., Tereshchenko, O. E. & Shikin, A. M., Feb 2023, In: Symmetry. 15, 2, 469.

    Research output: Contribution to journalArticlepeer-review

  8. Structural transitions on Si(1 1 1) surface during Sn adsorption, electromigration, and desorption studied by in situ UHV REM

    Petrov, A. S., Rogilo, D. I., Zhachuk, R. A., Vergules, A. I., Sheglov, D. V. & Latyshev, A. V., 30 Jan 2023, In: Applied Surface Science. 609, 155367.

    Research output: Contribution to journalArticlepeer-review

  9. Interference Transport in a Two-Dimensional Topological Insulator in a CdHgTe Quantum Well

    Ryzhkov, M. S., Kozlov, D. A., Khudaiberdiev, D. A., Kvon, Z. D. & Mikhailov, N. N., Jan 2023, In: JETP Letters. 117, 1, p. 44-47 4 p.

    Research output: Contribution to journalArticlepeer-review

  10. CPU vs RAM in the Issue of ab initio Simulations of Doped Hafnium Oxide for RRAM and FRAM

    Perevalov, T. V. & Islamov, D. R., 2023, In: Supercomputing Frontiers and Innovations. 10, 3, p. 18-26 9 p.

    Research output: Contribution to journalArticlepeer-review

  11. Electrically controlled switching between spatially separated conducting channels in a quantum point contact

    Сарыпов, Д. И., Похабов, Д. А., Погосов, А. Г., Жданов, Е. Ю. & Бакаров, А. К., 2023, In: St. Petersburg State Polytechnical University Journal: Physics and Mathematics. 16, 1.3, p. 117-123 7 p., 20.

    Research output: Contribution to journalArticlepeer-review

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