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  1. 2017

  2. Element base of quantum informatics I. Qubits of a quantum computer based on single atoms in optical traps

    Ryabtsev, I. I., Beterov, I. I., Yakshina, E. A., Tretyakov, D. B., Entin, V. M., Neizvestny, I. G., Latyshev, A. V. & Aseev, A. L., 1 Mar 2017, In: Russian Microelectronics. 46, 2, p. 109-120 12 p.

    Research output: Contribution to journal › Article › peer-review

  3. Local anodic oxidation of solid GeO films: The nanopatterning possibilities

    Astankova, K. N., Gorokhov, E. B., Azarov, I. A., Volodin, V. A. & Latyshev, A. V., 1 Mar 2017, In: Surfaces and Interfaces. 6, p. 56-59 4 p.

    Research output: Contribution to journal › Article › peer-review

  4. Giant microwave-induced B -periodic magnetoresistance oscillations in a two-dimensional electron gas with a bridged-gate tunnel point contact

    Levin, A. D., Mikhailov, S. A., Gusev, G. M., Kvon, Z. D., Rodyakina, E. E. & Latyshev, A. V., 23 Feb 2017, In: Physical Review B. 95, 8, 4 p., 081408.

    Research output: Contribution to journal › Article › peer-review

  5. Temperature dependence of photon-enhanced thermionic emission from GaAs surface with nonequilibrium Cs overlayers

    Zhuravlev, A. G. & Alperovich, V. L., 15 Feb 2017, In: Applied Surface Science. 395, p. 3-8 6 p.

    Research output: Contribution to journal › Article › peer-review

  6. Ultrafast energy- and momentum-resolved surface Dirac photocurrents in the topological insulator Sb2Te3

    Kuroda, K., Reimann, J., Kokh, K. A., Tereshchenko, O. E., Kimura, A., Güdde, J. & Höfer, U., 2 Feb 2017, In: Physical Review B. 95, 8, 5 p., 081103.

    Research output: Contribution to journal › Article › peer-review

  7. ESR Study of Electron States in Ge/Si Heterostructures with Nanodisc Shaped Quantum Dots

    Zinovieva, A. F., Zinovyev, V. A., Nenashev, A. V., Kulik, L. V. & Dvurechenskii, A. V., 1 Feb 2017, In: Zeitschrift fur Physikalische Chemie. 231, 2, p. 405-423 19 p.

    Research output: Contribution to journal › Article › peer-review

  8. Nucleation of two-dimensional islands on Si (111) during high-temperature epitaxial growth

    Sitnikov, S. V., Kosolobov, S. S. & Latyshev, A. V., 1 Feb 2017, In: Semiconductors. 51, 2, p. 203-206 4 p.

    Research output: Contribution to journal › Article › peer-review

  9. 2D Si island nucleation on the Si(111) surface at initial and late growth stages: On the role of step permeability in pyramidlike growth

    Rogilo, D. I., Fedina, L. I., Kosolobov, S. S., Ranguelov, B. S. & Latyshev, A. V., 1 Jan 2017, In: Journal of Crystal Growth. 457, p. 188-195 8 p.

    Research output: Contribution to journal › Article › peer-review

  10. Advacancy-mediated atomic steps kinetics and two-dimensional negative island nucleation on ultra-flat Si(111) surface

    Sitnikov, S. V., Latyshev, A. V. & Kosolobov, S. S., 1 Jan 2017, In: Journal of Crystal Growth. 457, p. 196-201 6 p.

    Research output: Contribution to journal › Article › peer-review

  11. AlInAs quantum dots

    Gaisler, A. V., Derebezov, I. A., Gaisler, V. A., Dmitriev, D. V., Toropov, A. I., Kozhukhov, A. S., Shcheglov, D. V., Latyshev, A. V. & Aseev, A. L., 1 Jan 2017, In: JETP Letters. 105, 2, p. 103-109 7 p.

    Research output: Contribution to journal › Article › peer-review

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