1. 2019
  2. Atomic and electronic structures of the native defects responsible for the resistive effect in HfO2: ab initio simulations

    Perevalov, T. V. & Islamov, D. R., 15 Aug 2019, In: Microelectronic Engineering. 216, 5 p., 111038.

    Research output: Contribution to journalArticlepeer-review

  3. Effect of oxygen vacancies on the ferroelectric Hf0.5Zr0.5O2 stabilization: DFT simulation

    Islamov, D. R. & Perevalov, T. V., 15 Aug 2019, In: Microelectronic Engineering. 216, 4 p., 111041.

    Research output: Contribution to journalArticlepeer-review

  4. Kinetics of anticrossing between slip traces and vicinal steps on crystal surfaces

    Coupeau, C., Kazantsev, D. M., Drouet, M. & Alperovich, V. L., 15 Aug 2019, In: Acta Materialia. 175, p. 206-213 8 p.

    Research output: Contribution to journalArticlepeer-review

  5. Step bunching phenomena on Si(0 0 1) surface induced by DC heating during sublimation and Si deposition

    Rodyakina, E. E., Sitnikov, S. V., Rogilo, D. I. & Latyshev, A. V., 15 Aug 2019, In: Journal of Crystal Growth. 520, p. 85-88 4 p.

    Research output: Contribution to journalArticlepeer-review

  6. Topological Protection Brought to Light by the Time-Reversal Symmetry Breaking

    Piatrusha, S. U., Tikhonov, E. S., Kvon, Z. D., Mikhailov, N. N., Dvoretsky, S. A. & Khrapai, V. S., 2 Aug 2019, In: Physical Review Letters. 123, 5, 6 p., 056801.

    Research output: Contribution to journalArticlepeer-review

  7. Electron emission from GaAs(Cs,O): Transition from negative to positive effective affinity

    Zhuravlev, A. G., Khoroshilov, V. S. & Alperovich, V. L., 31 Jul 2019, In: Applied Surface Science. 483, p. 895-900 6 p.

    Research output: Contribution to journalArticlepeer-review

  8. Edge States and Capacitance of a 2D Topological Insulator

    Braginsky, L. S. & Entin, M. V., 1 Jun 2019, In: Physica Status Solidi (B) Basic Research. 256, 6, 4 p., 1800675.

    Research output: Contribution to journalArticlepeer-review

  9. Electromigration Effect on Vacancy Islands Nucleation on Si(100) Surface during Sublimation

    Sitnikov, S. V., Rodyakina, E. E. & Latyshev, A. V., 1 Jun 2019, In: Semiconductors. 53, 6, p. 795-799 5 p.

    Research output: Contribution to journalArticlepeer-review

  10. Interaction between Electrons and Dipole Excitons in Two-Dimensional Systems (Scientific Summary)

    Kalameitsev, A. V., Mahmoodian, M. M. & Chaplik, A. V., 1 Jun 2019, In: JETP Letters. 109, 12, p. 806-815 10 p.

    Research output: Contribution to journalArticlepeer-review

  11. Cyclotron-resonance-induced photogalvanic effect in surface states of 200-nm-thick strained HgTe films

    Candussio, S., Budkin, G. V., Otteneder, M., Kozlov, D. A., Dmitriev, I. A., Bel'Kov, V. V., Kvon, Z. D., Mikhailov, N. N., Dvoretsky, S. A. & Ganichev, S. D., 23 May 2019, In: Physical Review Materials. 3, 5, 11 p., 054205.

    Research output: Contribution to journalArticlepeer-review

ID: 3084764