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  1. 2019

  2. Topological surface states in thick partially relaxed HgTe films

    Savchenko, M. L., Kozlov, D. A., Vasilev, N. N., Kvon, Z. D., Mikhailov, N. N., Dvoretsky, S. A. & Kolesnikov, A. V., 14 May 2019, In: Physical Review B. 99, 19, 7 p., 195423.

    Research output: Contribution to journal › Article › peer-review

  3. Erratum to: Bound State of an Electron in a MOS Structure Due to the Spin–Orbit Interaction (Journal of Experimental and Theoretical Physics, (2018), 127, 6, (1130-1135), 10.1134/S1063776118120075)

    Mahmoodian, M. M. & Chaplik, A. V., 1 May 2019, In: Journal of Experimental and Theoretical Physics. 128, 5, p. 816-816 1 p.

    Research output: Contribution to journal › Comment/debate › peer-review

  4. The role of a plasmonic substrate on the enhancement and spatial resolution of tip-enhanced Raman scattering

    Rahaman, M., Milekhin, A. G., Mukherjee, A., Rodyakina, E. E., Latyshev, A. V., Dzhagan, V. M. & Zahn, D. R. T., 1 May 2019, In: Faraday Discussions. 214, p. 309-323 15 p.

    Research output: Contribution to journal › Article › peer-review

  5. Monte Carlo simulation of roughening at step-terraced surfaces

    Kazantsev, D. M., Shwartz, N. L. & Alperovich, V. L., 17 Apr 2019, In: Journal of Physics: Conference Series. 1199, 1, 012010.

    Research output: Contribution to journal › Conference article › peer-review

  6. Surface photovoltage in a p-GaN(Cs) photocathode

    Rozhkov, S. A., Bakin, V. V., Gorshkov, D. V., Kosolobov, S. N. & Scheibler, H. E., 17 Apr 2019, In: Journal of Physics: Conference Series. 1199, 1, 012031.

    Research output: Contribution to journal › Conference article › peer-review

  7. Conduction mechanisms of TaN/HfO x /Ni memristors

    Voronkovskii, V. A., Aliev, V. S., Gerasimova, A. K. & Islamov, D. R., 5 Apr 2019, In: Materials Research Express. 6, 7, 7 p., 076411.

    Research output: Contribution to journal › Article › peer-review

  8. Evolution of Micropits on Large Terraces of the Si(111) Surface during High-Temperature Annealing

    Petrov, A. S., Sitnikov, S. V., Kosolobov, S. S. & Latyshev, A. V., 1 Apr 2019, In: Semiconductors. 53, 4, p. 434-438 5 p.

    Research output: Contribution to journal › Article › peer-review

  9. Electron spatial localization tuned by strain in Ge/Si quantum dot heterostructures

    Zinovieva, A. F., Zinovyev, V. A., Nenashev, A. V., Kulik, L. V. & Dvurechenskii, A. V., 22 Mar 2019, In: Physical Review B. 99, 11, 9 p., 115314.

    Research output: Contribution to journal › Article › peer-review

  10. Superradiant and transport lifetimes of the cyclotron resonance in the topological insulator HgTe

    Gospodarič, J., Dziom, V., Shuvaev, A., Dobretsova, A. A., Mikhailov, N. N., Kvon, Z. D. & Pimenov, A., 20 Mar 2019, In: Physical Review B. 99, 11, 5 p., 115130.

    Research output: Contribution to journal › Article › peer-review

  11. Dirac gap opening and Dirac-fermion-mediated magnetic coupling in antiferromagnetic Gd-doped topological insulators and their manipulation by synchrotron radiation

    Shikin, A. M., Estyunin, D. A., Surnin, Y. I., Koroleva, A. V., Shevchenko, E. V., Kokh, K. A., Tereshchenko, O. E., Kumar, S., Schwier, E. F., Shimada, K., Yoshikawa, T., Saitoh, Y., Takeda, Y. & Kimura, A., 18 Mar 2019, In: Scientific Reports. 9, 1, p. 4813 17 p., 4813.

    Research output: Contribution to journal › Article › peer-review

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