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  1. Band structure of a HgTe-based three-dimensional topological insulator

    Gospodarič, J., Dziom, V., Shuvaev, A., Dobretsova, A. A., Mikhailov, N. N., Kvon, Z. D., Novik, E. G. & Pimenov, A., Sept 2020, In: Physical Review B. 102, 11, 9 p., 115113.

    Research output: Contribution to journal › Article › peer-review

  2. Band Structure Near the Dirac Point in HgTe Quantum Wells with Critical Thickness

    Shuvaev, A., Dziom, V., Gospodarič, J., Novik, E. G., Dobretsova, A. A., Mikhailov, N. N., Kvon, Z. D. & Pimenov, A., Jul 2022, In: Nanomaterials. 12, 14, 2492.

    Research output: Contribution to journal › Article › peer-review

  3. Band gap opening in the BiSbTeSe2 topological surface state induced by ferromagnetic surface reordering

    Kaveev, A. K., Suturin, S. M., Golyashov, V. A., Kokh, K. A., Eremeev, S. V., Estyunin, D. A., Shikin, A. M., Okotrub, A. V., Lavrov, A. N., Schwier, E. F. & Tereshchenko, O. E., Dec 2021, In: Physical Review Materials. 5, 12, 124204.

    Research output: Contribution to journal › Article › peer-review

  4. Ballistic magnetotransport in a suspended two-dimensional electron gas with periodic antidot lattices

    Zhdanov, E. Y., Pogosov, A. G., Budantsev, M. V., Pokhabov, D. A. & Bakarov, A. K., 1 Jan 2017, In: Semiconductors. 51, 1, p. 8-13 6 p.

    Research output: Contribution to journal › Article › peer-review

  5. Ballistic geometric resistance resonances in a single surface of a topological insulator

    Maier, H., Ziegler, J., Fischer, R., Kozlov, D., Kvon, Z. D., Mikhailov, N., Dvoretsky, S. A. & Weiss, D., 8 Dec 2017, In: Nature Communications. 8, 1, 6 p., 2023.

    Research output: Contribution to journal › Article › peer-review

  6. A two-dimensional electron gas sensing motion of a nanomechanical cantilever

    Shevyrin, A. & Pogosov, A., 12 May 2017, In: Mechanical Sciences. 8, 1, p. 111-115 5 p.

    Research output: Contribution to journal › Article › peer-review

  7. Atomic Structure of Semiconductor Low-Dimensional Heterosystems

    Gutakovskii, A. K., Latyshev, A. V. & Aseev, A. L., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Publishing Company, Inc., p. 223-253 31 p. (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications).

    Research output: Chapter in Book/Report/Conference proceeding › Chapter › Research › peer-review

  8. Atomic Structure and Optical Properties of CaSi2 Layers Grown on CaF2/Si Substrates

    Zinovyev, V. A., Kacyuba, A. V., Volodin, V. A., Zinovieva, A. F., Cherkova, S. G., Smagina, Z. V., Dvurechenskii, A. V., Krupin, A. Y., Borodavchenko, O. M., Zhivulko, V. D. & Mudryi, A. V., Oct 2021, In: Semiconductors. 55, 10, p. 808-811 4 p.

    Research output: Contribution to journal › Article › peer-review

  9. Atomic Rearrangements and Photoemission Processes at a p-GaN(Cs)–Vacuum Interface

    Bakin, V. V., Kosolobov, S. N., Rozhkov, S. A., Scheibler, H. E. & Terekhov, A. S., 1 Aug 2018, In: JETP Letters. 108, 3, p. 180-184 5 p.

    Research output: Contribution to journal › Article › peer-review

  10. Atomic Processes on the Silicon Surface

    Latyshev, A. V., Fedina, L. I., Kosolobov, S. S., Sitnikov, S. V., Rogilo, D. I., Rodyakina, E. E., Nasimov, D. A., Sheglov, D. V. & Aseev, A. L., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Publishing Company, Inc., p. 189-221 33 p. (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications).

    Research output: Chapter in Book/Report/Conference proceeding › Chapter › Research › peer-review

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