1. Interaction between Electrons and Dipole Excitons in Two-Dimensional Systems (Scientific Summary)

    Kalameitsev, A. V., Mahmoodian, M. M. & Chaplik, A. V., 1 Jun 2019, In: JETP Letters. 109, 12, p. 806-815 10 p.

    Research output: Contribution to journalArticlepeer-review

  2. In situ tuning of symmetry-breaking-induced nonreciprocity in the giant-Rashba semiconductor BiTeBr

    Kocsis, M., Zheliuk, O., Makk, P., Tóvári, E., Kun, P., Tereshchenko, O. E., Kokh, K. A., Taniguchi, T., Watanabe, K., Ye, J. & Csonka, S., Sept 2021, In: Physical Review Research. 3, 3, 033253.

    Research output: Contribution to journalArticlepeer-review

  3. In situ reflection electron microscopy for the surface processes analysis during sublimation and epitaxial growth of layered metal chalcogenides

    Ponomarev, S. A., Rogilo, D. I., Zakhozhev, K. E., Nasimov, D. A., Kurus, N. N., Gutakovskii, A. K., Kokh, K. A., Milekhin, A. G., Sheglov, D. V. & Latyshev, A. V., 2024, In: Modern Electronic Materials. 10, 4, p. 251-261 11 p.

    Research output: Contribution to journalArticlepeer-review

  4. In situ reflection electron microscopy for investigation of surface processes on Bi2Se3(0001)

    Ponomarev, S. A., Rogilo, D. I., Kurus, N. N., Basalaeva, L. S., Kokh, K. A., Milekhin, A. G., Sheglov, D. V. & Latyshev, A. V., 13 Sept 2021, In: Journal of Physics: Conference Series. 1984, 1, 012016.

    Research output: Contribution to journalConference articlepeer-review

  5. Influence of the active TaN/ZrOx/Ni memristor layer oxygen content on forming and resistive switching behavior

    Voronkovskii, V. A., Aliev, V. S., Gerasimova, A. K., Perevalov, T. V., Prosvirin, I. P. & Islamov, D. R., 30 Apr 2021, In: Nanotechnology. 32, 18, 185205.

    Research output: Contribution to journalArticlepeer-review

  6. Influence of quantizing magnetic field and Rashba effect on indium arsenide metal-oxide-semiconductor structure accumulation capacitance

    Kovchavtsev, A. P., Aksenov, M. S., Tsarenko, A. V., Nastovjak, A. E., Pogosov, A. G., Pokhabov, D. A., Tereshchenko, O. E. & Valisheva, N. A., 7 May 2018, In: Journal of Applied Physics. 123, 17, 6 p., 173901.

    Research output: Contribution to journalArticlepeer-review

  7. Increase in the Photocurrent in Layers of Ge/Si Quantum Dots by Modes of a Two-Dimensional Photonic Crystal

    Yakimov, A. I., Bloshkin, A. A., Kirienko, V. V., Dvurechenskii, A. V. & Utkin, D. E., Apr 2021, In: JETP Letters. 113, 8, p. 498-503 6 p.

    Research output: Contribution to journalArticlepeer-review

  8. Impact of Ultrathin Pb Films on the Topological Surface and Quantum-Well States of Bi2Se3 and Sb2Te3 Topological Insulators

    Surnin, Y. A., Klimovskikh, I. I., Sostina, D. M., Kokh, K. A., Tereshchenko, O. E. & Shikin, A. M., 1 Apr 2018, In: Journal of Experimental and Theoretical Physics. 126, 4, p. 535-540 6 p.

    Research output: Contribution to journalArticlepeer-review

  9. Impact of oxygen vacancy on the ferroelectric properties of lanthanum-doped hafnium oxide

    Islamov, D. R., Zalyalov, T. M., Orlov, O. M., Gritsenko, V. A. & Krasnikov, G. Y., 19 Oct 2020, In: Applied Physics Letters. 117, 16, 5 p., 162901.

    Research output: Contribution to journalArticlepeer-review

  10. Impact of lanthanum doping on the electronic structure of oxygen vacancies in hafnium oxide

    Perevalov, T. V. & Islamov, D. R., 30 Jan 2024, In: Computational Materials Science. 233, 5 p., 112708.

    Research output: Contribution to journalArticlepeer-review

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