1 - 10 out of 443Page size: 10
Sort by: Title

  1. 2D island nucleation controlled by nanocluster diffusion during Si and Ge epitaxy on Si(1 1 1)-(7 × 7) surface at elevated temperatures

    Petrov, A. S., Rogilo, D. I., Sheglov, D. V. & Latyshev, A. V., 1 Feb 2020, In: Journal of Crystal Growth. 531, 6 p., 125347.

    Research output: Contribution to journal › Article › peer-review

  2. 2D Si island nucleation on the Si(111) surface at initial and late growth stages: On the role of step permeability in pyramidlike growth

    Rogilo, D. I., Fedina, L. I., Kosolobov, S. S., Ranguelov, B. S. & Latyshev, A. V., 1 Jan 2017, In: Journal of Crystal Growth. 457, p. 188-195 8 p.

    Research output: Contribution to journal › Article › peer-review

  3. Advacancy-mediated atomic steps kinetics and two-dimensional negative island nucleation on ultra-flat Si(111) surface

    Sitnikov, S. V., Latyshev, A. V. & Kosolobov, S. S., 1 Jan 2017, In: Journal of Crystal Growth. 457, p. 196-201 6 p.

    Research output: Contribution to journal › Article › peer-review

  4. A highly porous surface of synthetic monocrystalline diamond: Effect of etching by Fe nanoparticles in hydrogen atmosphere

    Chepurov, A., Sonin, V., Shcheglov, D., Latyshev, A., Filatov, E. & Yelisseyev, A., 1 Nov 2018, In: International Journal of Refractory Metals and Hard Materials. 76, p. 12-15 4 p.

    Research output: Contribution to journal › Article › peer-review

  5. AlInAs quantum dots

    Gaisler, A. V., Derebezov, I. A., Gaisler, V. A., Dmitriev, D. V., Toropov, A. I., Kozhukhov, A. S., Shcheglov, D. V., Latyshev, A. V. & Aseev, A. L., 1 Jan 2017, In: JETP Letters. 105, 2, p. 103-109 7 p.

    Research output: Contribution to journal › Article › peer-review

  6. AlN/GaN heterostructures for normally-off transistors

    Zhuravlev, K. S., Malin, T. V., Mansurov, V. G., Tereshenko, O. E., Abgaryan, K. K., Reviznikov, D. L., Zemlyakov, V. E., Egorkin, V. I., Parnes, Y. M., Tikhomirov, V. G. & Prosvirin, I. P., 1 Mar 2017, In: Semiconductors. 51, 3, p. 379-386 8 p.

    Research output: Contribution to journal › Article › peer-review

  7. Analytical Expression for the Distribution of Elastic Strain Created by a Polyhedral Inclusion with Arbitrary Eigenstrain

    Nenashev, A. V. & Dvurechenskii, A. V., 1 Sept 2018, In: Physics of the Solid State. 60, 9, p. 1807-1812 6 p.

    Research output: Contribution to journal › Article › peer-review

  8. Analytical theory for charge carrier recombination in blend organic solar cells

    Nenashev, A. V., Wiemer, M., Dvurechenskii, A. V., Kulik, L. V., Pevtsov, A. B., Gebhard, F., Koch, M. & Baranovskii, S. D., 28 Mar 2017, In: Physical Review B. 95, 10, 12 p., 104207.

    Research output: Contribution to journal › Article › peer-review

  9. Anderson Localization in a Two-Dimensional Electron–Hole System

    Kvon, Z. D., Olshanetsky, E. B., Drofa, M. A. & Mikhailov, N. N., Sept 2021, In: JETP Letters. 114, 6, p. 341-346 6 p.

    Research output: Contribution to journal › Article › peer-review

  10. A new imaging concept in spin polarimetry based on the spin-filter effect

    Tereshchenko, O. E., Golyashov, V. A., Rusetsky, V. S., Mironov, A. V., Demin, A. Y. & Aksenov, V. V., 1 May 2021, In: Journal of Synchrotron Radiation. 28, p. 864-875 12 p.

    Research output: Contribution to journal › Article › peer-review

Previous 1 2 3 4 5 6 7 8 ...45 Next

ID: 3084764