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  1. Radiation-Induced epitaxial CaSi2 film growth at the molecular-beam epitaxy of CaF2 on Si

    Kacyuba, A. V., Dvurechenskii, A. V., Kamaev, G. N., Volodin, V. A. & Krupin, A. Y., 1 Jun 2020, In: Materials Letters. 268, 4 p., 127554.

    Research output: Contribution to journal › Article › peer-review

  2. Radiation-Induced Nucleation and Growth of CaSi2 Crystals, Both Directly during the Epitaxial CaF2 Growth and after the CaF2 Film Formation

    Dvurechenskii, A. V., Kacyuba, A. V., Kamaev, G. N., Volodin, V. A. & Smagina, Z. V., 1 May 2022, In: Nanomaterials. 12, 9, 1407.

    Research output: Contribution to journal › Article › peer-review

  3. Raman Scattering Spectroscopy and Photoluminescence of GaAs Nanowires

    Kalachev, I. V., Milekhin, I. A., Emel’yanov, E. A., Preobrazhenskii, V. V., Tumashev, V. S., Milekhin, A. G. & Latyshev, A. V., Dec 2023, In: Optoelectronics, Instrumentation and Data Processing. 59, 6, p. 659-666 8 p.

    Research output: Contribution to journal › Article › peer-review

  4. Raman scattering spectroscopy of MBE grown thin film topological insulator Bi2−xSbxTe3−ySey

    Kumar, N., Surovtsev, N. V., Yunin, P. A., Ishchenko, D. V., Milekhin, I. A., Lebedev, S. P., Lebedev, A. A. & Tereshchenko, O. E., 12 Apr 2024, In: Physical Chemistry Chemical Physics. 26, 17, p. 13497-13505 9 p.

    Research output: Contribution to journal › Article › peer-review

  5. Raman shifts and photoluminescence of the InSb nanocrystals ion beam-synthesized in buried SiO2 layers

    Tyschenko, I. E., Volodin, V. A., Cherkov, A. G., Stoffel, M., Rinnert, H., Vergnat, M. & Popov, V. P., 1 Dec 2018, In: Journal of Luminescence. 204, p. 656-662 7 p.

    Research output: Contribution to journal › Article › peer-review

  6. Redirecting Incident Light with Mie Resonance-Based Coatings

    Shklyaev, A. A., Utkin, D. E., Zheng, Z. & Tsarev, A. V., Nov 2023, In: Photonics. 10, 11, 1286.

    Research output: Contribution to journal › Article › peer-review

  7. Redistribution of Erbium and Oxygen Recoil Atoms and the Structure of Silicon Thin Surface Layers Formed by High-Dose Argon Implantation through Er and SiO2 Surface Films

    Feklistov, K. V., Cherkov, A. G., Popov, V. P. & Fedina, L. I., 1 Dec 2018, In: Semiconductors. 52, 13, p. 1696-1703 8 p.

    Research output: Contribution to journal › Article › peer-review

  8. Regimes of enhanced electromagnetic emission in beam-plasma interactions

    Timofeev, I. V., Annenkov, V. V. & Arzhannikov, A. V., 1 Nov 2015, In: Physics of Plasmas. 22, 11, 113109.

    Research output: Contribution to journal › Article › peer-review

  9. Remarkable enhancement of photoluminescence and photoresponse due to photonic crystal structures based on GeSiSn/Si multiple quantum wells

    Timofeev, V. A., Mashanov, V. I., Nikiforov, A. I., Skvortsov, I. V., Gayduk, A. E., Bloshkin, A. A., Kirienko, V. V., Utkin, D. E., Kolyada, D. V., Firsov, D. D. & Komkov, O. S., Apr 2023, In: Materials Today Physics. 33, 9 p., 101052.

    Research output: Contribution to journal › Article › peer-review

  10. Resistive switching in non-stoichiometric germanosilicate glass films containing ge nanoclusters

    Volodin, V. A., Geydt, P., Kamaev, G. N., Gismatulin, A. A., Krivyakin, G. K., Prosvirin, I. P., Azarov, I. A., Fan, Z. & Vergnat, M., Dec 2020, In: Electronics (Switzerland). 9, 12, p. 1-17 17 p., 2103.

    Research output: Contribution to journal › Article › peer-review

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