Redistribution of Erbium and Oxygen Recoil Atoms and the Structure of Silicon Thin Surface Layers Formed by High-Dose Argon Implantation through Er and SiO2 Surface Films

Redistribution of Erbium and Oxygen Recoil Atoms and the Structure of Silicon Thin Surface Layers Formed by High-Dose Argon Implantation through Er and SiO₂ Surface Films

Research output: Contribution to journal › Article › peer-review

SOLID-PHASE EPITAXY, 1.54 MU-M, ELECTRON-MICROSCOPY, OPTICAL ACTIVATION, AMORPHOUS LAYERS, CRYSTAL SILICON, ELECTROLUMINESCENCE, EXCITATION, REGROWTH, DEFECTS

ID: 18066701