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  1. The Nature of Defects Responsible for Transport in a Hafnia-Based Resistive Random Access Memory Element

    Islamov, D. R., Perevalov, T. V., Gritsenko, V. A., Aliev, V. S., Saraev, A. A., Kaichev, V. V., Ivanova, E. V., Zamoryanskaya, M. V. & Chin, A., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Publishing Company, Inc., p. 493-504 12 p. (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications).

    Research output: Chapter in Book/Report/Conference proceeding › Chapter › Research › peer-review

  2. The reentrant four-layer quasi-elliptic bandstop filter

    Atuchin, V. V., Gorbachev, A. P., Khrustalev, V. A. & Tarasenko, N. V., 1 Jan 2019, In: Electronics (Switzerland). 8, 1, 20 p., 81.

    Research output: Contribution to journal › Article › peer-review

  3. The role of a plasmonic substrate on the enhancement and spatial resolution of tip-enhanced Raman scattering

    Rahaman, M., Milekhin, A. G., Mukherjee, A., Rodyakina, E. E., Latyshev, A. V., Dzhagan, V. M. & Zahn, D. R. T., 1 May 2019, In: Faraday Discussions. 214, p. 309-323 15 p.

    Research output: Contribution to journal › Article › peer-review

  4. Transformation of the InP(001) surface upon annealing in an arsenic flux

    Dmitriev, D. V., Kolosovsky, D. A., Gavrilova, T. A., Gutakovskii, A. K., Toropov, A. I. & Zhuravlev, K. S., Aug 2021, In: Surface Science. 710, 121861.

    Research output: Contribution to journal › Article › peer-review

  5. Two-photon holographic recording in LiTaO3:Fe crystals with high intensity nanosecond pulses at 532 nm

    Steinberg, I. S. & Atuchin, V. V., 1 Oct 2020, In: Materials Chemistry and Physics. 253, 6 p., 122956.

    Research output: Contribution to journal › Article › peer-review

  6. Undoped High-Resistance GaN Buffer Layer for AlGaN/GaN High-Electron-Mobility Transistors

    Malin, T. V., Milakhin, D. S., Aleksandrov, I. A., Zemlyakov, V. E., Egorkin, V. I., Zaitsev, A. A., Protasov, D. Y., Kozhukhov, A. S., Ber, B. Y., Kazantsev, D. Y., Mansurov, V. G. & Zhuravlev, K. S., 1 Aug 2019, In: Technical Physics Letters. 45, 8, p. 761-764 4 p.

    Research output: Contribution to journal › Article › peer-review

  7. Universal building block for (1 1 0)-family silicon and germanium surfaces

    Zhachuk, R. A. & Shklyaev, A. A., 15 Nov 2019, In: Applied Surface Science. 494, p. 46-50 5 p.

    Research output: Contribution to journal › Article › peer-review

  8. Vapor growth of Bi2Se3 and Bi2O2Se crystals on mica

    Kokh, K. A., Nebogatikova, N. A., Antonova, I. V., Kustov, D. A., Golyashov, V. A., Goldyreva, E. S., Stepina, N. P., Kirienko, V. V. & Tereshchenko, O. E., Sept 2020, In: Materials Research Bulletin. 129, 6 p., 110906.

    Research output: Contribution to journal › Article › peer-review

  9. Аномальное влияние верхнего слоя из InGaAs на оптические свойства квантово-размерной волноводной структуры для электрооптических модуляторов на основе фосфида индия

    Журавлев, К. С., Царев, А. В., Гуляев, Д. В., Колосовский, Е. А., Арыков, В. С., Юнусов, И. В., Ишуткин, С. В. & Шейнбергер, А. А., 2025, In: Квантовая электроника. 55, 1, p. 30-35

    Research output: Contribution to journal › Article › peer-review

  10. Компенсированный высокоомный буфер для GaN HEMT

    Malin, T. V., Milakhin, D. S., Aleksandrov, I. A., Zemlyakov, V. E., Protasov, D. Y., Kozhuhov, A. S., Ber, B. Y., Mansurov, V. G. & Журавлев, К. С., 2019, In: Электроника и микроэлектроника СВЧ. 1, 1, p. 44-48 5 p.

    Research output: Contribution to journal › Meeting Abstract › peer-review

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