Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Viscous magnetotransport and Gurzhi effect in bilayer electron system. / Gusev, G. M.; Jaroshevich, A. S.; Levin, A. D. и др.
в: Physical Review B, Том 103, № 7, 075303, 10.02.2021.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Viscous magnetotransport and Gurzhi effect in bilayer electron system
AU - Gusev, G. M.
AU - Jaroshevich, A. S.
AU - Levin, A. D.
AU - Kvon, Z. D.
AU - Bakarov, A. K.
N1 - Funding Information: The financial support of this work by RSF Grant No. 21-12-00159, São Paulo Research Foundation (FAPESP) Grants No. 2015/16191-5 and No. 2017/21340-5, and the National Council for Scientific and Technological Development (CNPq) is acknowledged. We thank O.E. Raichev for the helpful discussions. Publisher Copyright: © 2021 American Physical Society. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.
PY - 2021/2/10
Y1 - 2021/2/10
N2 - We observe a large negative magnetoresistance and a decrease of resistivity with increasing temperature, known as the Gurzhi effect, in a bilayer (BL) electron system formed by a wide GaAs quantum well. A hydrodynamic model for the single fluid transport parameters in narrow channels is employed and successfully describes our experimental findings. We find that the electron-electron scattering in the bilayer is more intensive in comparison with a single-band well (SW). The hydrodynamic assumption implies a strong dependence on boundary conditions, which can be characterized by slip length, describing the behavior of a liquid near the edge. Our results reveal that slip length in a BL is shorter than in a SW, and that the BL system goes deeper into the hydrodynamic regime. This is in agreement with the model proposed where the slip length is of the order of the electron-electron mean free path.
AB - We observe a large negative magnetoresistance and a decrease of resistivity with increasing temperature, known as the Gurzhi effect, in a bilayer (BL) electron system formed by a wide GaAs quantum well. A hydrodynamic model for the single fluid transport parameters in narrow channels is employed and successfully describes our experimental findings. We find that the electron-electron scattering in the bilayer is more intensive in comparison with a single-band well (SW). The hydrodynamic assumption implies a strong dependence on boundary conditions, which can be characterized by slip length, describing the behavior of a liquid near the edge. Our results reveal that slip length in a BL is shorter than in a SW, and that the BL system goes deeper into the hydrodynamic regime. This is in agreement with the model proposed where the slip length is of the order of the electron-electron mean free path.
UR - http://www.scopus.com/inward/record.url?scp=85100669154&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.103.075303
DO - 10.1103/PhysRevB.103.075303
M3 - Article
AN - SCOPUS:85100669154
VL - 103
JO - Physical Review B
JF - Physical Review B
SN - 2469-9950
IS - 7
M1 - 075303
ER -
ID: 27772294