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Viscous magnetotransport and Gurzhi effect in bilayer electron system. / Gusev, G. M.; Jaroshevich, A. S.; Levin, A. D. et al.

In: Physical Review B, Vol. 103, No. 7, 075303, 10.02.2021.

Research output: Contribution to journal › Article › peer-review

Harvard

Gusev, GM, Jaroshevich, AS, Levin, AD, Kvon, ZD & Bakarov, AK 2021, 'Viscous magnetotransport and Gurzhi effect in bilayer electron system', Physical Review B, vol. 103, no. 7, 075303. https://doi.org/10.1103/PhysRevB.103.075303

APA

Gusev, G. M., Jaroshevich, A. S., Levin, A. D., Kvon, Z. D., & Bakarov, A. K. (2021). Viscous magnetotransport and Gurzhi effect in bilayer electron system. Physical Review B, 103(7), [075303]. https://doi.org/10.1103/PhysRevB.103.075303

Vancouver

Gusev GM, Jaroshevich AS, Levin AD, Kvon ZD, Bakarov AK. Viscous magnetotransport and Gurzhi effect in bilayer electron system. Physical Review B. 2021 Feb 10;103(7):075303. doi: 10.1103/PhysRevB.103.075303

Author

Gusev, G. M. ; Jaroshevich, A. S. ; Levin, A. D. et al. / Viscous magnetotransport and Gurzhi effect in bilayer electron system. In: Physical Review B. 2021 ; Vol. 103, No. 7.

BibTeX

@article{007b60b486a5455fb7417671a0e48b1d,
title = "Viscous magnetotransport and Gurzhi effect in bilayer electron system",
abstract = "We observe a large negative magnetoresistance and a decrease of resistivity with increasing temperature, known as the Gurzhi effect, in a bilayer (BL) electron system formed by a wide GaAs quantum well. A hydrodynamic model for the single fluid transport parameters in narrow channels is employed and successfully describes our experimental findings. We find that the electron-electron scattering in the bilayer is more intensive in comparison with a single-band well (SW). The hydrodynamic assumption implies a strong dependence on boundary conditions, which can be characterized by slip length, describing the behavior of a liquid near the edge. Our results reveal that slip length in a BL is shorter than in a SW, and that the BL system goes deeper into the hydrodynamic regime. This is in agreement with the model proposed where the slip length is of the order of the electron-electron mean free path.",
author = "Gusev, {G. M.} and Jaroshevich, {A. S.} and Levin, {A. D.} and Kvon, {Z. D.} and Bakarov, {A. K.}",
note = "Funding Information: The financial support of this work by RSF Grant No. 21-12-00159, S{\~a}o Paulo Research Foundation (FAPESP) Grants No. 2015/16191-5 and No. 2017/21340-5, and the National Council for Scientific and Technological Development (CNPq) is acknowledged. We thank O.E. Raichev for the helpful discussions. Publisher Copyright: {\textcopyright} 2021 American Physical Society. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.",
year = "2021",
month = feb,
day = "10",
doi = "10.1103/PhysRevB.103.075303",
language = "English",
volume = "103",
journal = "Physical Review B",
issn = "2469-9950",
publisher = "American Physical Society",
number = "7",

}

RIS

TY - JOUR

T1 - Viscous magnetotransport and Gurzhi effect in bilayer electron system

AU - Gusev, G. M.

AU - Jaroshevich, A. S.

AU - Levin, A. D.

AU - Kvon, Z. D.

AU - Bakarov, A. K.

N1 - Funding Information: The financial support of this work by RSF Grant No. 21-12-00159, São Paulo Research Foundation (FAPESP) Grants No. 2015/16191-5 and No. 2017/21340-5, and the National Council for Scientific and Technological Development (CNPq) is acknowledged. We thank O.E. Raichev for the helpful discussions. Publisher Copyright: © 2021 American Physical Society. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.

PY - 2021/2/10

Y1 - 2021/2/10

N2 - We observe a large negative magnetoresistance and a decrease of resistivity with increasing temperature, known as the Gurzhi effect, in a bilayer (BL) electron system formed by a wide GaAs quantum well. A hydrodynamic model for the single fluid transport parameters in narrow channels is employed and successfully describes our experimental findings. We find that the electron-electron scattering in the bilayer is more intensive in comparison with a single-band well (SW). The hydrodynamic assumption implies a strong dependence on boundary conditions, which can be characterized by slip length, describing the behavior of a liquid near the edge. Our results reveal that slip length in a BL is shorter than in a SW, and that the BL system goes deeper into the hydrodynamic regime. This is in agreement with the model proposed where the slip length is of the order of the electron-electron mean free path.

AB - We observe a large negative magnetoresistance and a decrease of resistivity with increasing temperature, known as the Gurzhi effect, in a bilayer (BL) electron system formed by a wide GaAs quantum well. A hydrodynamic model for the single fluid transport parameters in narrow channels is employed and successfully describes our experimental findings. We find that the electron-electron scattering in the bilayer is more intensive in comparison with a single-band well (SW). The hydrodynamic assumption implies a strong dependence on boundary conditions, which can be characterized by slip length, describing the behavior of a liquid near the edge. Our results reveal that slip length in a BL is shorter than in a SW, and that the BL system goes deeper into the hydrodynamic regime. This is in agreement with the model proposed where the slip length is of the order of the electron-electron mean free path.

UR - http://www.scopus.com/inward/record.url?scp=85100669154&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.103.075303

DO - 10.1103/PhysRevB.103.075303

M3 - Article

AN - SCOPUS:85100669154

VL - 103

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

IS - 7

M1 - 075303

ER -

ID: 27772294