Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Urbach tail and nonuniformity probe of HgCdTe thin films and quantum well heterostructures grown by molecular beam epitaxy. / Rumyantsev, Vladimir V.; Razova, Anna A.; Fadeev, Mikhail A. и др.
в: Optical Engineering, Том 60, № 8, 082007, 01.08.2021.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Urbach tail and nonuniformity probe of HgCdTe thin films and quantum well heterostructures grown by molecular beam epitaxy
AU - Rumyantsev, Vladimir V.
AU - Razova, Anna A.
AU - Fadeev, Mikhail A.
AU - Utochkin, Vladimir V.
AU - Mikhailov, Nikolai N.
AU - Dvoretsky, Sergey A.
AU - Gavrilenko, Vladimir I.
AU - Morozov, Sergey V.
N1 - Publisher Copyright: © 2020 Society of Photo-Optical Instrumentation Engineers (SPIE).
PY - 2021/8/1
Y1 - 2021/8/1
N2 - Temperature-driven photoconductivity spectra are studied in HgCdTe thin films and quantum well (QW) heterostructures grown by molecular beam epitaxy (MBE). It is shown that the absorption edge steepness in narrow gap HgCdTe epilayers approaches the fundamental limit. The corresponding Urbach energy is 1.5 to 4 meV at 4.2 to 77 K, which is an order of magnitude lower than values reported previously, indicating a significant progress in the quality of structures grown by MBE. Auger-suppressed multi-QW heterostructures that can be used for development of long-wavelength lasers/detectors are shown to have the comparable steepness of the absorption edge. The corresponding "Urbach"energy is much less than the threshold energy of the Auger recombination, which means that furthering the operating wavelengths beyond 20 μm is feasible for optoelectronic devices based on HgCdTe structures.
AB - Temperature-driven photoconductivity spectra are studied in HgCdTe thin films and quantum well (QW) heterostructures grown by molecular beam epitaxy (MBE). It is shown that the absorption edge steepness in narrow gap HgCdTe epilayers approaches the fundamental limit. The corresponding Urbach energy is 1.5 to 4 meV at 4.2 to 77 K, which is an order of magnitude lower than values reported previously, indicating a significant progress in the quality of structures grown by MBE. Auger-suppressed multi-QW heterostructures that can be used for development of long-wavelength lasers/detectors are shown to have the comparable steepness of the absorption edge. The corresponding "Urbach"energy is much less than the threshold energy of the Auger recombination, which means that furthering the operating wavelengths beyond 20 μm is feasible for optoelectronic devices based on HgCdTe structures.
KW - HgCdTe
KW - infrared spectroscopy
KW - molecular beam epitaxy
KW - photoconductivity
KW - Urbach tail
UR - http://www.scopus.com/inward/record.url?scp=85112085958&partnerID=8YFLogxK
U2 - 10.1117/1.OE.60.8.082007
DO - 10.1117/1.OE.60.8.082007
M3 - Article
AN - SCOPUS:85112085958
VL - 60
JO - Optical Engineering
JF - Optical Engineering
SN - 0091-3286
IS - 8
M1 - 082007
ER -
ID: 29282525