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Urbach tail and nonuniformity probe of HgCdTe thin films and quantum well heterostructures grown by molecular beam epitaxy. / Rumyantsev, Vladimir V.; Razova, Anna A.; Fadeev, Mikhail A. et al.

In: Optical Engineering, Vol. 60, No. 8, 082007, 01.08.2021.

Research output: Contribution to journalArticlepeer-review

Harvard

Rumyantsev, VV, Razova, AA, Fadeev, MA, Utochkin, VV, Mikhailov, NN, Dvoretsky, SA, Gavrilenko, VI & Morozov, SV 2021, 'Urbach tail and nonuniformity probe of HgCdTe thin films and quantum well heterostructures grown by molecular beam epitaxy', Optical Engineering, vol. 60, no. 8, 082007. https://doi.org/10.1117/1.OE.60.8.082007

APA

Rumyantsev, V. V., Razova, A. A., Fadeev, M. A., Utochkin, V. V., Mikhailov, N. N., Dvoretsky, S. A., Gavrilenko, V. I., & Morozov, S. V. (2021). Urbach tail and nonuniformity probe of HgCdTe thin films and quantum well heterostructures grown by molecular beam epitaxy. Optical Engineering, 60(8), [082007]. https://doi.org/10.1117/1.OE.60.8.082007

Vancouver

Rumyantsev VV, Razova AA, Fadeev MA, Utochkin VV, Mikhailov NN, Dvoretsky SA et al. Urbach tail and nonuniformity probe of HgCdTe thin films and quantum well heterostructures grown by molecular beam epitaxy. Optical Engineering. 2021 Aug 1;60(8):082007. doi: 10.1117/1.OE.60.8.082007

Author

Rumyantsev, Vladimir V. ; Razova, Anna A. ; Fadeev, Mikhail A. et al. / Urbach tail and nonuniformity probe of HgCdTe thin films and quantum well heterostructures grown by molecular beam epitaxy. In: Optical Engineering. 2021 ; Vol. 60, No. 8.

BibTeX

@article{735c4a47363a45cf87bcf63b3b72a9b6,
title = "Urbach tail and nonuniformity probe of HgCdTe thin films and quantum well heterostructures grown by molecular beam epitaxy",
abstract = "Temperature-driven photoconductivity spectra are studied in HgCdTe thin films and quantum well (QW) heterostructures grown by molecular beam epitaxy (MBE). It is shown that the absorption edge steepness in narrow gap HgCdTe epilayers approaches the fundamental limit. The corresponding Urbach energy is 1.5 to 4 meV at 4.2 to 77 K, which is an order of magnitude lower than values reported previously, indicating a significant progress in the quality of structures grown by MBE. Auger-suppressed multi-QW heterostructures that can be used for development of long-wavelength lasers/detectors are shown to have the comparable steepness of the absorption edge. The corresponding {"}Urbach{"}energy is much less than the threshold energy of the Auger recombination, which means that furthering the operating wavelengths beyond 20 μm is feasible for optoelectronic devices based on HgCdTe structures. ",
keywords = "HgCdTe, infrared spectroscopy, molecular beam epitaxy, photoconductivity, Urbach tail",
author = "Rumyantsev, {Vladimir V.} and Razova, {Anna A.} and Fadeev, {Mikhail A.} and Utochkin, {Vladimir V.} and Mikhailov, {Nikolai N.} and Dvoretsky, {Sergey A.} and Gavrilenko, {Vladimir I.} and Morozov, {Sergey V.}",
note = "Publisher Copyright: {\textcopyright} 2020 Society of Photo-Optical Instrumentation Engineers (SPIE).",
year = "2021",
month = aug,
day = "1",
doi = "10.1117/1.OE.60.8.082007",
language = "English",
volume = "60",
journal = "Optical Engineering",
issn = "0091-3286",
publisher = "SPIE",
number = "8",

}

RIS

TY - JOUR

T1 - Urbach tail and nonuniformity probe of HgCdTe thin films and quantum well heterostructures grown by molecular beam epitaxy

AU - Rumyantsev, Vladimir V.

AU - Razova, Anna A.

AU - Fadeev, Mikhail A.

AU - Utochkin, Vladimir V.

AU - Mikhailov, Nikolai N.

AU - Dvoretsky, Sergey A.

AU - Gavrilenko, Vladimir I.

AU - Morozov, Sergey V.

N1 - Publisher Copyright: © 2020 Society of Photo-Optical Instrumentation Engineers (SPIE).

PY - 2021/8/1

Y1 - 2021/8/1

N2 - Temperature-driven photoconductivity spectra are studied in HgCdTe thin films and quantum well (QW) heterostructures grown by molecular beam epitaxy (MBE). It is shown that the absorption edge steepness in narrow gap HgCdTe epilayers approaches the fundamental limit. The corresponding Urbach energy is 1.5 to 4 meV at 4.2 to 77 K, which is an order of magnitude lower than values reported previously, indicating a significant progress in the quality of structures grown by MBE. Auger-suppressed multi-QW heterostructures that can be used for development of long-wavelength lasers/detectors are shown to have the comparable steepness of the absorption edge. The corresponding "Urbach"energy is much less than the threshold energy of the Auger recombination, which means that furthering the operating wavelengths beyond 20 μm is feasible for optoelectronic devices based on HgCdTe structures.

AB - Temperature-driven photoconductivity spectra are studied in HgCdTe thin films and quantum well (QW) heterostructures grown by molecular beam epitaxy (MBE). It is shown that the absorption edge steepness in narrow gap HgCdTe epilayers approaches the fundamental limit. The corresponding Urbach energy is 1.5 to 4 meV at 4.2 to 77 K, which is an order of magnitude lower than values reported previously, indicating a significant progress in the quality of structures grown by MBE. Auger-suppressed multi-QW heterostructures that can be used for development of long-wavelength lasers/detectors are shown to have the comparable steepness of the absorption edge. The corresponding "Urbach"energy is much less than the threshold energy of the Auger recombination, which means that furthering the operating wavelengths beyond 20 μm is feasible for optoelectronic devices based on HgCdTe structures.

KW - HgCdTe

KW - infrared spectroscopy

KW - molecular beam epitaxy

KW - photoconductivity

KW - Urbach tail

UR - http://www.scopus.com/inward/record.url?scp=85112085958&partnerID=8YFLogxK

U2 - 10.1117/1.OE.60.8.082007

DO - 10.1117/1.OE.60.8.082007

M3 - Article

AN - SCOPUS:85112085958

VL - 60

JO - Optical Engineering

JF - Optical Engineering

SN - 0091-3286

IS - 8

M1 - 082007

ER -

ID: 29282525