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Transformation of N-Polar Inversion Domains from AlN Buffer Layers during the Growth of AlGaN Layers. / Osinnykh, I. V.; Malin, T. V.; Kozhukhov, A. S. и др.

в: Semiconductors, Том 56, № 6, 06.2022, стр. 352-359.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Osinnykh, IV, Malin, TV, Kozhukhov, AS, Ber, BY, Kazancev, DY & Zhuravlev, KS 2022, 'Transformation of N-Polar Inversion Domains from AlN Buffer Layers during the Growth of AlGaN Layers', Semiconductors, Том. 56, № 6, стр. 352-359. https://doi.org/10.1134/S1063782622070077

APA

Osinnykh, I. V., Malin, T. V., Kozhukhov, A. S., Ber, B. Y., Kazancev, D. Y., & Zhuravlev, K. S. (2022). Transformation of N-Polar Inversion Domains from AlN Buffer Layers during the Growth of AlGaN Layers. Semiconductors, 56(6), 352-359. https://doi.org/10.1134/S1063782622070077

Vancouver

Osinnykh IV, Malin TV, Kozhukhov AS, Ber BY, Kazancev DY, Zhuravlev KS. Transformation of N-Polar Inversion Domains from AlN Buffer Layers during the Growth of AlGaN Layers. Semiconductors. 2022 июнь;56(6):352-359. doi: 10.1134/S1063782622070077

Author

Osinnykh, I. V. ; Malin, T. V. ; Kozhukhov, A. S. и др. / Transformation of N-Polar Inversion Domains from AlN Buffer Layers during the Growth of AlGaN Layers. в: Semiconductors. 2022 ; Том 56, № 6. стр. 352-359.

BibTeX

@article{2261f85e2df34476b592ffcfe2ead469,
title = "Transformation of N-Polar Inversion Domains from AlN Buffer Layers during the Growth of AlGaN Layers",
abstract = "The structural properties and crystal quality of AlxGa1 ‒ xN/AlN/Al2O3 heterostructures grown by ammonia-assisted molecular-beam epitaxy with a high silicon concentration in the AlxGa1 ‒ xN:Si layers are studied by atomic force microscopy and dynamic secondary-ion mass spectrometry. It is shown that if AlN buffer layers of metal polarity contain inversion domains of nitrogen polarity, during subsequent growth of the AlxGa1 ‒ xN:Si layers, inversion domains do not grow to the surface, but change their nitrogen polarity for metal polarity. At the place of AlN inversion domains, broadening AlxGa1 ‒ xN columns of metal polarity grow, which coalesce in a homogeneous film with the Me-polar matrix surrounding them. The thickness corresponding to complete intergrowth increases with the Al content in the layers.",
keywords = "A nitrides, ammonia-assisted MBE, inversion domains, structural defects, A3 nitrides",
author = "Osinnykh, {I. V.} and Malin, {T. V.} and Kozhukhov, {A. S.} and Ber, {B. Ya} and Kazancev, {D. Yu} and Zhuravlev, {K. S.}",
note = "Funding Information: This study was supported by the Ministry of Science and Higher Education of the Russian Federation, state assignment no. FWGW-2022-0005 “Heterostructures Based on AB Materials for Radio Photonics, Microwave Electronics, and Photoelectronics”. 3 5 Publisher Copyright: {\textcopyright} 2022, Pleiades Publishing, Ltd.",
year = "2022",
month = jun,
doi = "10.1134/S1063782622070077",
language = "English",
volume = "56",
pages = "352--359",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "PLEIADES PUBLISHING INC",
number = "6",

}

RIS

TY - JOUR

T1 - Transformation of N-Polar Inversion Domains from AlN Buffer Layers during the Growth of AlGaN Layers

AU - Osinnykh, I. V.

AU - Malin, T. V.

AU - Kozhukhov, A. S.

AU - Ber, B. Ya

AU - Kazancev, D. Yu

AU - Zhuravlev, K. S.

N1 - Funding Information: This study was supported by the Ministry of Science and Higher Education of the Russian Federation, state assignment no. FWGW-2022-0005 “Heterostructures Based on AB Materials for Radio Photonics, Microwave Electronics, and Photoelectronics”. 3 5 Publisher Copyright: © 2022, Pleiades Publishing, Ltd.

PY - 2022/6

Y1 - 2022/6

N2 - The structural properties and crystal quality of AlxGa1 ‒ xN/AlN/Al2O3 heterostructures grown by ammonia-assisted molecular-beam epitaxy with a high silicon concentration in the AlxGa1 ‒ xN:Si layers are studied by atomic force microscopy and dynamic secondary-ion mass spectrometry. It is shown that if AlN buffer layers of metal polarity contain inversion domains of nitrogen polarity, during subsequent growth of the AlxGa1 ‒ xN:Si layers, inversion domains do not grow to the surface, but change their nitrogen polarity for metal polarity. At the place of AlN inversion domains, broadening AlxGa1 ‒ xN columns of metal polarity grow, which coalesce in a homogeneous film with the Me-polar matrix surrounding them. The thickness corresponding to complete intergrowth increases with the Al content in the layers.

AB - The structural properties and crystal quality of AlxGa1 ‒ xN/AlN/Al2O3 heterostructures grown by ammonia-assisted molecular-beam epitaxy with a high silicon concentration in the AlxGa1 ‒ xN:Si layers are studied by atomic force microscopy and dynamic secondary-ion mass spectrometry. It is shown that if AlN buffer layers of metal polarity contain inversion domains of nitrogen polarity, during subsequent growth of the AlxGa1 ‒ xN:Si layers, inversion domains do not grow to the surface, but change their nitrogen polarity for metal polarity. At the place of AlN inversion domains, broadening AlxGa1 ‒ xN columns of metal polarity grow, which coalesce in a homogeneous film with the Me-polar matrix surrounding them. The thickness corresponding to complete intergrowth increases with the Al content in the layers.

KW - A nitrides

KW - ammonia-assisted MBE

KW - inversion domains

KW - structural defects

KW - A3 nitrides

UR - http://www.scopus.com/inward/record.url?scp=85136875801&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/634f45e3-50f3-36b5-bb27-9d57ae1d57db/

U2 - 10.1134/S1063782622070077

DO - 10.1134/S1063782622070077

M3 - Article

AN - SCOPUS:85136875801

VL - 56

SP - 352

EP - 359

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 6

ER -

ID: 37069995