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Thermoelectric transport in two-dimensional topological insulator state based on HgTe quantum well. / Gusev, G. M.; Raichev, O. E.; Olshanetsky, E. B. и др.

в: 2D Materials, Том 6, № 1, 014001, 01.01.2019.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Gusev, GM, Raichev, OE, Olshanetsky, EB, Levin, AD, Kvon, ZD, Mikhailov, NN & Dvoretsky, SA 2019, 'Thermoelectric transport in two-dimensional topological insulator state based on HgTe quantum well', 2D Materials, Том. 6, № 1, 014001. https://doi.org/10.1088/2053-1583/aaf702

APA

Gusev, G. M., Raichev, O. E., Olshanetsky, E. B., Levin, A. D., Kvon, Z. D., Mikhailov, N. N., & Dvoretsky, S. A. (2019). Thermoelectric transport in two-dimensional topological insulator state based on HgTe quantum well. 2D Materials, 6(1), [014001]. https://doi.org/10.1088/2053-1583/aaf702

Vancouver

Gusev GM, Raichev OE, Olshanetsky EB, Levin AD, Kvon ZD, Mikhailov NN и др. Thermoelectric transport in two-dimensional topological insulator state based on HgTe quantum well. 2D Materials. 2019 янв. 1;6(1):014001. doi: 10.1088/2053-1583/aaf702

Author

Gusev, G. M. ; Raichev, O. E. ; Olshanetsky, E. B. и др. / Thermoelectric transport in two-dimensional topological insulator state based on HgTe quantum well. в: 2D Materials. 2019 ; Том 6, № 1.

BibTeX

@article{eee05e36cccd45a189a35ed52e884c6d,
title = "Thermoelectric transport in two-dimensional topological insulator state based on HgTe quantum well",
abstract = "The thermoelectric response of HgTe quantum wells in the state of two-dimensional topological insulator (2D TI) has been studied experimentally. Ambipolar thermopower, typical for an electron-hole system, has been observed across the charge neutrality point, where the carrier type changes from electrons to holes according to the resistance measurements. The hole-type thermopower is much stronger than the electron-type one. The thermopower linearly increases with temperature. We present a theoretical model which accounts for both the edge and bulk contributions to the electrical conductivity and thermoelectric effect in a 2D TI, including the effects of edge to bulk leakage. The model, contrary to previous theoretical studies, demonstrates that the 2D TI is not expected to show anomalies of thermopower near the band conductivity threshold, which is consistent with our experimental results. Based on the experimental data and theoretical analysis, we conclude that the observed thermopower is mostly of the bulk origin, while the resistance is determined by both the edge and bulk transport.",
keywords = "edge states, HgTe quantum well, quantum transport, thermopower, topological insulator",
author = "Gusev, {G. M.} and Raichev, {O. E.} and Olshanetsky, {E. B.} and Levin, {A. D.} and Kvon, {Z. D.} and Mikhailov, {N. N.} and Dvoretsky, {S. A.}",
year = "2019",
month = jan,
day = "1",
doi = "10.1088/2053-1583/aaf702",
language = "English",
volume = "6",
journal = "2D Materials",
issn = "2053-1583",
publisher = "IOP Publishing Ltd.",
number = "1",

}

RIS

TY - JOUR

T1 - Thermoelectric transport in two-dimensional topological insulator state based on HgTe quantum well

AU - Gusev, G. M.

AU - Raichev, O. E.

AU - Olshanetsky, E. B.

AU - Levin, A. D.

AU - Kvon, Z. D.

AU - Mikhailov, N. N.

AU - Dvoretsky, S. A.

PY - 2019/1/1

Y1 - 2019/1/1

N2 - The thermoelectric response of HgTe quantum wells in the state of two-dimensional topological insulator (2D TI) has been studied experimentally. Ambipolar thermopower, typical for an electron-hole system, has been observed across the charge neutrality point, where the carrier type changes from electrons to holes according to the resistance measurements. The hole-type thermopower is much stronger than the electron-type one. The thermopower linearly increases with temperature. We present a theoretical model which accounts for both the edge and bulk contributions to the electrical conductivity and thermoelectric effect in a 2D TI, including the effects of edge to bulk leakage. The model, contrary to previous theoretical studies, demonstrates that the 2D TI is not expected to show anomalies of thermopower near the band conductivity threshold, which is consistent with our experimental results. Based on the experimental data and theoretical analysis, we conclude that the observed thermopower is mostly of the bulk origin, while the resistance is determined by both the edge and bulk transport.

AB - The thermoelectric response of HgTe quantum wells in the state of two-dimensional topological insulator (2D TI) has been studied experimentally. Ambipolar thermopower, typical for an electron-hole system, has been observed across the charge neutrality point, where the carrier type changes from electrons to holes according to the resistance measurements. The hole-type thermopower is much stronger than the electron-type one. The thermopower linearly increases with temperature. We present a theoretical model which accounts for both the edge and bulk contributions to the electrical conductivity and thermoelectric effect in a 2D TI, including the effects of edge to bulk leakage. The model, contrary to previous theoretical studies, demonstrates that the 2D TI is not expected to show anomalies of thermopower near the band conductivity threshold, which is consistent with our experimental results. Based on the experimental data and theoretical analysis, we conclude that the observed thermopower is mostly of the bulk origin, while the resistance is determined by both the edge and bulk transport.

KW - edge states

KW - HgTe quantum well

KW - quantum transport

KW - thermopower

KW - topological insulator

UR - http://www.scopus.com/inward/record.url?scp=85059228789&partnerID=8YFLogxK

U2 - 10.1088/2053-1583/aaf702

DO - 10.1088/2053-1583/aaf702

M3 - Article

AN - SCOPUS:85059228789

VL - 6

JO - 2D Materials

JF - 2D Materials

SN - 2053-1583

IS - 1

M1 - 014001

ER -

ID: 18067943