TY - JOUR

T1 - Thermal Smoothing and Roughening of GaAs Surfaces

T2 - Experiment and Monte Carlo Simulation

AU - Kazantsev, D. M.

AU - Akhundov, I. O.

AU - Alperovich, V. L.

AU - Shwartz, N. L.

AU - Kozhukhov, A. S.

AU - Latyshev, A. V.

PY - 2018/5/1

Y1 - 2018/5/1

N2 - GaAs thermal smoothing at temperatures T ≤ 650°C in the conditions close to equilibrium yields surfaces with atomically smooth terraces separated by steps of monatomic height. At higher temperatures surface smoothing is changed to roughening. Possible reasons of surface roughening at elevated temperatures are studied by means of Monte Carlo simulation and compared with the experimental results on GaAs. It is proved that GaAs roughening at elevated temperatures is caused by kinetic instabilities due to deviations from equilibrium towards growth or sublimation. The microscopic mechanisms of kinetic-driven roughening are discussed.

AB - GaAs thermal smoothing at temperatures T ≤ 650°C in the conditions close to equilibrium yields surfaces with atomically smooth terraces separated by steps of monatomic height. At higher temperatures surface smoothing is changed to roughening. Possible reasons of surface roughening at elevated temperatures are studied by means of Monte Carlo simulation and compared with the experimental results on GaAs. It is proved that GaAs roughening at elevated temperatures is caused by kinetic instabilities due to deviations from equilibrium towards growth or sublimation. The microscopic mechanisms of kinetic-driven roughening are discussed.

UR - http://www.scopus.com/inward/record.url?scp=85045766767&partnerID=8YFLogxK

U2 - 10.1134/S1063782618050147

DO - 10.1134/S1063782618050147

M3 - Article

AN - SCOPUS:85045766767

VL - 52

SP - 618

EP - 621

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 5

ER -