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Thermal Smoothing and Roughening of GaAs Surfaces : Experiment and Monte Carlo Simulation. / Kazantsev, D. M.; Akhundov, I. O.; Alperovich, V. L. et al.

In: Semiconductors, Vol. 52, No. 5, 01.05.2018, p. 618-621.

Research output: Contribution to journal › Article › peer-review

Harvard

Kazantsev, DM, Akhundov, IO, Alperovich, VL, Shwartz, NL, Kozhukhov, AS & Latyshev, AV 2018, 'Thermal Smoothing and Roughening of GaAs Surfaces: Experiment and Monte Carlo Simulation', Semiconductors, vol. 52, no. 5, pp. 618-621. https://doi.org/10.1134/S1063782618050147

APA

Kazantsev, D. M., Akhundov, I. O., Alperovich, V. L., Shwartz, N. L., Kozhukhov, A. S., & Latyshev, A. V. (2018). Thermal Smoothing and Roughening of GaAs Surfaces: Experiment and Monte Carlo Simulation. Semiconductors, 52(5), 618-621. https://doi.org/10.1134/S1063782618050147

Vancouver

Kazantsev DM, Akhundov IO, Alperovich VL, Shwartz NL, Kozhukhov AS, Latyshev AV. Thermal Smoothing and Roughening of GaAs Surfaces: Experiment and Monte Carlo Simulation. Semiconductors. 2018 May 1;52(5):618-621. doi: 10.1134/S1063782618050147

Author

Kazantsev, D. M. ; Akhundov, I. O. ; Alperovich, V. L. et al. / Thermal Smoothing and Roughening of GaAs Surfaces : Experiment and Monte Carlo Simulation. In: Semiconductors. 2018 ; Vol. 52, No. 5. pp. 618-621.

BibTeX

@article{abe8c17d55394105a69d6fc9e620b5b6,
title = "Thermal Smoothing and Roughening of GaAs Surfaces: Experiment and Monte Carlo Simulation",
abstract = "GaAs thermal smoothing at temperatures T ≤ 650°C in the conditions close to equilibrium yields surfaces with atomically smooth terraces separated by steps of monatomic height. At higher temperatures surface smoothing is changed to roughening. Possible reasons of surface roughening at elevated temperatures are studied by means of Monte Carlo simulation and compared with the experimental results on GaAs. It is proved that GaAs roughening at elevated temperatures is caused by kinetic instabilities due to deviations from equilibrium towards growth or sublimation. The microscopic mechanisms of kinetic-driven roughening are discussed.",
author = "Kazantsev, {D. M.} and Akhundov, {I. O.} and Alperovich, {V. L.} and Shwartz, {N. L.} and Kozhukhov, {A. S.} and Latyshev, {A. V.}",
year = "2018",
month = may,
day = "1",
doi = "10.1134/S1063782618050147",
language = "English",
volume = "52",
pages = "618--621",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "PLEIADES PUBLISHING INC",
number = "5",

}

RIS

TY - JOUR

T1 - Thermal Smoothing and Roughening of GaAs Surfaces

T2 - Experiment and Monte Carlo Simulation

AU - Kazantsev, D. M.

AU - Akhundov, I. O.

AU - Alperovich, V. L.

AU - Shwartz, N. L.

AU - Kozhukhov, A. S.

AU - Latyshev, A. V.

PY - 2018/5/1

Y1 - 2018/5/1

N2 - GaAs thermal smoothing at temperatures T ≤ 650°C in the conditions close to equilibrium yields surfaces with atomically smooth terraces separated by steps of monatomic height. At higher temperatures surface smoothing is changed to roughening. Possible reasons of surface roughening at elevated temperatures are studied by means of Monte Carlo simulation and compared with the experimental results on GaAs. It is proved that GaAs roughening at elevated temperatures is caused by kinetic instabilities due to deviations from equilibrium towards growth or sublimation. The microscopic mechanisms of kinetic-driven roughening are discussed.

AB - GaAs thermal smoothing at temperatures T ≤ 650°C in the conditions close to equilibrium yields surfaces with atomically smooth terraces separated by steps of monatomic height. At higher temperatures surface smoothing is changed to roughening. Possible reasons of surface roughening at elevated temperatures are studied by means of Monte Carlo simulation and compared with the experimental results on GaAs. It is proved that GaAs roughening at elevated temperatures is caused by kinetic instabilities due to deviations from equilibrium towards growth or sublimation. The microscopic mechanisms of kinetic-driven roughening are discussed.

UR - http://www.scopus.com/inward/record.url?scp=85045766767&partnerID=8YFLogxK

U2 - 10.1134/S1063782618050147

DO - 10.1134/S1063782618050147

M3 - Article

AN - SCOPUS:85045766767

VL - 52

SP - 618

EP - 621

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 5

ER -

ID: 12798929