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Thermal roughening of GaAs surface by unwinding dislocation-induced spiral atomic steps during sublimation. / Kazantsev, D. M.; Akhundov, I. O.; Rudaya, N. S. и др.

в: Applied Surface Science, Том 529, 147090, 01.11.2020.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Kazantsev, DM, Akhundov, IO, Rudaya, NS, Kozhukhov, AS, Alperovich, VL & Latyshev, AV 2020, 'Thermal roughening of GaAs surface by unwinding dislocation-induced spiral atomic steps during sublimation', Applied Surface Science, Том. 529, 147090. https://doi.org/10.1016/j.apsusc.2020.147090

APA

Kazantsev, D. M., Akhundov, I. O., Rudaya, N. S., Kozhukhov, A. S., Alperovich, V. L., & Latyshev, A. V. (2020). Thermal roughening of GaAs surface by unwinding dislocation-induced spiral atomic steps during sublimation. Applied Surface Science, 529, [147090]. https://doi.org/10.1016/j.apsusc.2020.147090

Vancouver

Kazantsev DM, Akhundov IO, Rudaya NS, Kozhukhov AS, Alperovich VL, Latyshev AV. Thermal roughening of GaAs surface by unwinding dislocation-induced spiral atomic steps during sublimation. Applied Surface Science. 2020 нояб. 1;529:147090. doi: 10.1016/j.apsusc.2020.147090

Author

Kazantsev, D. M. ; Akhundov, I. O. ; Rudaya, N. S. и др. / Thermal roughening of GaAs surface by unwinding dislocation-induced spiral atomic steps during sublimation. в: Applied Surface Science. 2020 ; Том 529.

BibTeX

@article{58c7bc202b3a43ae8f37c5f10db92b08,
title = "Thermal roughening of GaAs surface by unwinding dislocation-induced spiral atomic steps during sublimation",
abstract = "Surface morphology evolution of flat GaAs epitaxial layers grown on mesa structured substrates is studied under annealing in the presence of a saturated Ga-As melt. At high temperatures T > 700 °C, when the annealing conditions are shifted from the equilibrium towards sublimation, the initially flat surface roughens by unwinding spiral monatomic steps, which are induced by screw dislocations. This process leads to the formation of “inverted pyramid” spiral pits. Along with the spiral pits, the roughening consists in multilayer island formation on terraces, at the surface spots where the sublimation is inhibited. The mechanism of island formation is reproduced in the Monte Carlo simulation. The obtained data allowed us to estimate the relative undersaturation of −0.015 and Ga adatom diffusion length of 15 nm at T = 750 °C. Annealing at higher temperature T = 775 °C resulted in a peculiar “vortex”-like surface morphology, which consists in deep spiral pits covering the major part of the surface area.",
keywords = "GaAs, Screw dislocations, Spiral atomic steps, Surface diffusion length, Surface roughening, PERMEABILITY, GAAS(001) SURFACE, DROPLETS, DENSITY, EVAPORATION, MOTION, HOMOEPITAXIAL GROWTH, SI(111) SURFACE, EQUILIBRIUM, MONTE-CARLO-SIMULATION",
author = "Kazantsev, {D. M.} and Akhundov, {I. O.} and Rudaya, {N. S.} and Kozhukhov, {A. S.} and Alperovich, {V. L.} and Latyshev, {A. V.}",
year = "2020",
month = nov,
day = "1",
doi = "10.1016/j.apsusc.2020.147090",
language = "English",
volume = "529",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Thermal roughening of GaAs surface by unwinding dislocation-induced spiral atomic steps during sublimation

AU - Kazantsev, D. M.

AU - Akhundov, I. O.

AU - Rudaya, N. S.

AU - Kozhukhov, A. S.

AU - Alperovich, V. L.

AU - Latyshev, A. V.

PY - 2020/11/1

Y1 - 2020/11/1

N2 - Surface morphology evolution of flat GaAs epitaxial layers grown on mesa structured substrates is studied under annealing in the presence of a saturated Ga-As melt. At high temperatures T > 700 °C, when the annealing conditions are shifted from the equilibrium towards sublimation, the initially flat surface roughens by unwinding spiral monatomic steps, which are induced by screw dislocations. This process leads to the formation of “inverted pyramid” spiral pits. Along with the spiral pits, the roughening consists in multilayer island formation on terraces, at the surface spots where the sublimation is inhibited. The mechanism of island formation is reproduced in the Monte Carlo simulation. The obtained data allowed us to estimate the relative undersaturation of −0.015 and Ga adatom diffusion length of 15 nm at T = 750 °C. Annealing at higher temperature T = 775 °C resulted in a peculiar “vortex”-like surface morphology, which consists in deep spiral pits covering the major part of the surface area.

AB - Surface morphology evolution of flat GaAs epitaxial layers grown on mesa structured substrates is studied under annealing in the presence of a saturated Ga-As melt. At high temperatures T > 700 °C, when the annealing conditions are shifted from the equilibrium towards sublimation, the initially flat surface roughens by unwinding spiral monatomic steps, which are induced by screw dislocations. This process leads to the formation of “inverted pyramid” spiral pits. Along with the spiral pits, the roughening consists in multilayer island formation on terraces, at the surface spots where the sublimation is inhibited. The mechanism of island formation is reproduced in the Monte Carlo simulation. The obtained data allowed us to estimate the relative undersaturation of −0.015 and Ga adatom diffusion length of 15 nm at T = 750 °C. Annealing at higher temperature T = 775 °C resulted in a peculiar “vortex”-like surface morphology, which consists in deep spiral pits covering the major part of the surface area.

KW - GaAs

KW - Screw dislocations

KW - Spiral atomic steps

KW - Surface diffusion length

KW - Surface roughening

KW - PERMEABILITY

KW - GAAS(001) SURFACE

KW - DROPLETS

KW - DENSITY

KW - EVAPORATION

KW - MOTION

KW - HOMOEPITAXIAL GROWTH

KW - SI(111) SURFACE

KW - EQUILIBRIUM

KW - MONTE-CARLO-SIMULATION

UR - http://www.scopus.com/inward/record.url?scp=85087336265&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2020.147090

DO - 10.1016/j.apsusc.2020.147090

M3 - Article

AN - SCOPUS:85087336265

VL - 529

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

M1 - 147090

ER -

ID: 24716833