Standard

The increase in band bending at the p-GaN(Cs) - Vacuum interface due to the photoemission from surface states. / Rozhkov, S. A.; Bakin, V. V.; Kosolobov, S. N. и др.

в: Journal of Physics: Conference Series, Том 1482, № 1, 012008, 01.03.2020.

Результаты исследований: Научные публикации в периодических изданиях › статья по материалам конференции › Рецензирование

Harvard

Rozhkov, SA, Bakin, VV, Kosolobov, SN, Scheibler, HE & Terekhov, AS 2020, 'The increase in band bending at the p-GaN(Cs) - Vacuum interface due to the photoemission from surface states', Journal of Physics: Conference Series, Том. 1482, № 1, 012008. https://doi.org/10.1088/1742-6596/1482/1/012008

APA

Rozhkov, S. A., Bakin, V. V., Kosolobov, S. N., Scheibler, H. E., & Terekhov, A. S. (2020). The increase in band bending at the p-GaN(Cs) - Vacuum interface due to the photoemission from surface states. Journal of Physics: Conference Series, 1482(1), [012008]. https://doi.org/10.1088/1742-6596/1482/1/012008

Vancouver

Rozhkov SA, Bakin VV, Kosolobov SN, Scheibler HE, Terekhov AS. The increase in band bending at the p-GaN(Cs) - Vacuum interface due to the photoemission from surface states. Journal of Physics: Conference Series. 2020 март 1;1482(1):012008. doi: 10.1088/1742-6596/1482/1/012008

Author

Rozhkov, S. A. ; Bakin, V. V. ; Kosolobov, S. N. и др. / The increase in band bending at the p-GaN(Cs) - Vacuum interface due to the photoemission from surface states. в: Journal of Physics: Conference Series. 2020 ; Том 1482, № 1.

BibTeX

@article{ce4a629797b34b87886ecc8d4557a7d1,
title = "The increase in band bending at the p-GaN(Cs) - Vacuum interface due to the photoemission from surface states",
abstract = "The photoelectron processes in a p-GaN(Cs) photocathode with the effective negative electron affinity were studied experimentally within the 90-295 K temperature range. It was found that the photocathode illumination at the photon energies, which are below the energy gap of the p-GaN layer, increases the band bending at a semiconductor surface due to the photoemission from surface states.",
author = "Rozhkov, {S. A.} and Bakin, {V. V.} and Kosolobov, {S. N.} and Scheibler, {H. E.} and Terekhov, {A. S.}",
year = "2020",
month = mar,
day = "1",
doi = "10.1088/1742-6596/1482/1/012008",
language = "English",
volume = "1482",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "1",
note = "21st Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2019 ; Conference date: 25-11-2019 Through 29-11-2019",

}

RIS

TY - JOUR

T1 - The increase in band bending at the p-GaN(Cs) - Vacuum interface due to the photoemission from surface states

AU - Rozhkov, S. A.

AU - Bakin, V. V.

AU - Kosolobov, S. N.

AU - Scheibler, H. E.

AU - Terekhov, A. S.

PY - 2020/3/1

Y1 - 2020/3/1

N2 - The photoelectron processes in a p-GaN(Cs) photocathode with the effective negative electron affinity were studied experimentally within the 90-295 K temperature range. It was found that the photocathode illumination at the photon energies, which are below the energy gap of the p-GaN layer, increases the band bending at a semiconductor surface due to the photoemission from surface states.

AB - The photoelectron processes in a p-GaN(Cs) photocathode with the effective negative electron affinity were studied experimentally within the 90-295 K temperature range. It was found that the photocathode illumination at the photon energies, which are below the energy gap of the p-GaN layer, increases the band bending at a semiconductor surface due to the photoemission from surface states.

UR - http://www.scopus.com/inward/record.url?scp=85082992824&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/1482/1/012008

DO - 10.1088/1742-6596/1482/1/012008

M3 - Conference article

AN - SCOPUS:85082992824

VL - 1482

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012008

T2 - 21st Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2019

Y2 - 25 November 2019 through 29 November 2019

ER -

ID: 23995593