Research output: Contribution to journal › Conference article › peer-review
The increase in band bending at the p-GaN(Cs) - Vacuum interface due to the photoemission from surface states. / Rozhkov, S. A.; Bakin, V. V.; Kosolobov, S. N. et al.
In: Journal of Physics: Conference Series, Vol. 1482, No. 1, 012008, 01.03.2020.Research output: Contribution to journal › Conference article › peer-review
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TY - JOUR
T1 - The increase in band bending at the p-GaN(Cs) - Vacuum interface due to the photoemission from surface states
AU - Rozhkov, S. A.
AU - Bakin, V. V.
AU - Kosolobov, S. N.
AU - Scheibler, H. E.
AU - Terekhov, A. S.
PY - 2020/3/1
Y1 - 2020/3/1
N2 - The photoelectron processes in a p-GaN(Cs) photocathode with the effective negative electron affinity were studied experimentally within the 90-295 K temperature range. It was found that the photocathode illumination at the photon energies, which are below the energy gap of the p-GaN layer, increases the band bending at a semiconductor surface due to the photoemission from surface states.
AB - The photoelectron processes in a p-GaN(Cs) photocathode with the effective negative electron affinity were studied experimentally within the 90-295 K temperature range. It was found that the photocathode illumination at the photon energies, which are below the energy gap of the p-GaN layer, increases the band bending at a semiconductor surface due to the photoemission from surface states.
UR - http://www.scopus.com/inward/record.url?scp=85082992824&partnerID=8YFLogxK
U2 - 10.1088/1742-6596/1482/1/012008
DO - 10.1088/1742-6596/1482/1/012008
M3 - Conference article
AN - SCOPUS:85082992824
VL - 1482
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
SN - 1742-6588
IS - 1
M1 - 012008
T2 - 21st Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2019
Y2 - 25 November 2019 through 29 November 2019
ER -
ID: 23995593