Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Terahertz resistive response of a two-dimensional topological insulator in a quasiballistic transport regime. / Kvon, Z. D.; Dantscher, K. -M.; Scherr, M. -T. и др.
в: JETP Letters, Том 104, № 10, 01.11.2016, стр. 716-720.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Terahertz resistive response of a two-dimensional topological insulator in a quasiballistic transport regime
AU - Kvon, Z. D.
AU - Dantscher, K. -M.
AU - Scherr, M. -T.
AU - Yaroshevich, A. S.
AU - Mikhailov, N. N.
PY - 2016/11/1
Y1 - 2016/11/1
N2 - The terahertz resistive response of a two-dimensional topological insulator in a HgTe quantum well in the quasiballistic transport regime is studied. The photoresistance appearing only near the charge neutrality point is detected. The application of the magnetic field up to 4 T in the plane of the quantum well results in an increase in the photoresistance in the peak and in the expansion of the region near the charge neutrality point where it exists. The reported results imply that the observed photoresistance is due to transitions involving edge dispersion branches of the two-dimensional topological insulator.
AB - The terahertz resistive response of a two-dimensional topological insulator in a HgTe quantum well in the quasiballistic transport regime is studied. The photoresistance appearing only near the charge neutrality point is detected. The application of the magnetic field up to 4 T in the plane of the quantum well results in an increase in the photoresistance in the peak and in the expansion of the region near the charge neutrality point where it exists. The reported results imply that the observed photoresistance is due to transitions involving edge dispersion branches of the two-dimensional topological insulator.
KW - HGTE QUANTUM-WELL
KW - EDGE
UR - http://www.scopus.com/inward/record.url?scp=85013151835&partnerID=8YFLogxK
U2 - 10.1134/S0021364016220112
DO - 10.1134/S0021364016220112
M3 - Article
VL - 104
SP - 716
EP - 720
JO - JETP Letters
JF - JETP Letters
SN - 0021-3640
IS - 10
ER -
ID: 18733796