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Terahertz resistive response of a two-dimensional topological insulator in a quasiballistic transport regime. / Kvon, Z. D.; Dantscher, K. -M.; Scherr, M. -T. et al.

In: JETP Letters, Vol. 104, No. 10, 01.11.2016, p. 716-720.

Research output: Contribution to journal › Article › peer-review

Harvard

Kvon, ZD, Dantscher, K-M, Scherr, M-T, Yaroshevich, AS & Mikhailov, NN 2016, 'Terahertz resistive response of a two-dimensional topological insulator in a quasiballistic transport regime', JETP Letters, vol. 104, no. 10, pp. 716-720. https://doi.org/10.1134/S0021364016220112

APA

Kvon, Z. D., Dantscher, K. -M., Scherr, M. -T., Yaroshevich, A. S., & Mikhailov, N. N. (2016). Terahertz resistive response of a two-dimensional topological insulator in a quasiballistic transport regime. JETP Letters, 104(10), 716-720. https://doi.org/10.1134/S0021364016220112

Vancouver

Kvon ZD, Dantscher K-M, Scherr M-T, Yaroshevich AS, Mikhailov NN. Terahertz resistive response of a two-dimensional topological insulator in a quasiballistic transport regime. JETP Letters. 2016 Nov 1;104(10):716-720. doi: 10.1134/S0021364016220112

Author

Kvon, Z. D. ; Dantscher, K. -M. ; Scherr, M. -T. et al. / Terahertz resistive response of a two-dimensional topological insulator in a quasiballistic transport regime. In: JETP Letters. 2016 ; Vol. 104, No. 10. pp. 716-720.

BibTeX

@article{b3afbbd4683f4f71bf9f6f30ea6d23c6,
title = "Terahertz resistive response of a two-dimensional topological insulator in a quasiballistic transport regime",
abstract = "The terahertz resistive response of a two-dimensional topological insulator in a HgTe quantum well in the quasiballistic transport regime is studied. The photoresistance appearing only near the charge neutrality point is detected. The application of the magnetic field up to 4 T in the plane of the quantum well results in an increase in the photoresistance in the peak and in the expansion of the region near the charge neutrality point where it exists. The reported results imply that the observed photoresistance is due to transitions involving edge dispersion branches of the two-dimensional topological insulator.",
keywords = "HGTE QUANTUM-WELL, EDGE",
author = "Kvon, {Z. D.} and Dantscher, {K. -M.} and Scherr, {M. -T.} and Yaroshevich, {A. S.} and Mikhailov, {N. N.}",
year = "2016",
month = nov,
day = "1",
doi = "10.1134/S0021364016220112",
language = "English",
volume = "104",
pages = "716--720",
journal = "JETP Letters",
issn = "0021-3640",
publisher = "MAIK NAUKA/INTERPERIODICA/SPRINGER",
number = "10",

}

RIS

TY - JOUR

T1 - Terahertz resistive response of a two-dimensional topological insulator in a quasiballistic transport regime

AU - Kvon, Z. D.

AU - Dantscher, K. -M.

AU - Scherr, M. -T.

AU - Yaroshevich, A. S.

AU - Mikhailov, N. N.

PY - 2016/11/1

Y1 - 2016/11/1

N2 - The terahertz resistive response of a two-dimensional topological insulator in a HgTe quantum well in the quasiballistic transport regime is studied. The photoresistance appearing only near the charge neutrality point is detected. The application of the magnetic field up to 4 T in the plane of the quantum well results in an increase in the photoresistance in the peak and in the expansion of the region near the charge neutrality point where it exists. The reported results imply that the observed photoresistance is due to transitions involving edge dispersion branches of the two-dimensional topological insulator.

AB - The terahertz resistive response of a two-dimensional topological insulator in a HgTe quantum well in the quasiballistic transport regime is studied. The photoresistance appearing only near the charge neutrality point is detected. The application of the magnetic field up to 4 T in the plane of the quantum well results in an increase in the photoresistance in the peak and in the expansion of the region near the charge neutrality point where it exists. The reported results imply that the observed photoresistance is due to transitions involving edge dispersion branches of the two-dimensional topological insulator.

KW - HGTE QUANTUM-WELL

KW - EDGE

UR - http://www.scopus.com/inward/record.url?scp=85013151835&partnerID=8YFLogxK

U2 - 10.1134/S0021364016220112

DO - 10.1134/S0021364016220112

M3 - Article

VL - 104

SP - 716

EP - 720

JO - JETP Letters

JF - JETP Letters

SN - 0021-3640

IS - 10

ER -

ID: 18733796